Graphene oxide overprints for flexible and transparent electronics

Rogala, Maciej; Własny, I.; Dąbrowski, P.; Kowalczyk, P.J.; Busiakiewicz, A.; Kozlowski, W.; Lipińska, L.; Jagiełło, Joanna; Aksienionek, M.; Strupiński, Włodek; Krajewska, Aleksandra; Sieradzki, Z.; Krucińska, Izabella; Puchalski, Michał; Skrzetuska, Ewa; Klusek, Z.

doi:10.1063/1.4906593

Cited by 42 publications

(21 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To address this limitation, alternative methods such as laser annealing, chemical reduction, and intensive light reduction have been developed. While effective at addressing the substrate temperature issue, chemical reduction uses toxic or acidic chemicals such as hydrazine, hydrobromic acid, and hydroiodic acid, and the reduction process can only be performed on chemically‐inert, nonabsorbent materials. Laser and intensive light methods use focused light for localized annealing, but to minimize thermal damage to the substrate, the substrate material should either be transparent to the incident light, the exposure period must be precisely managed to prevent overheating, or the light source should be controlled to illuminate only the printed structure .…”

Section: Introductionmentioning

confidence: 99%

Electrically Conductive, Reduced Graphene Oxide Structures Fabricated by Inkjet Printing and Low Temperature Plasma Reduction

Sui

Hess-Dunning

Wei

et al. 2019

Adv Materials Technologies

View full text Add to dashboard Cite

Here, an environmentally‐friendly and scalable process is reported to synthesize reduced graphene oxide (RGO) thin films for printed electronics applications. The films are produced by inkjet printing GO flakes dispersed binder‐free in aqueous solutions followed by treatment with a nonthermal, radio‐frequency (RF) plasma containing only argon (Ar) gas. The plasma process is found to heat the substrate to temperatures no greater than 138 °C, enabling RGO to be printed directly on a wide range of temperature‐sensitive substrate materials including photo paper. Unlike other low‐temperature methods such as electrochemical reduction, plasma reduction is friendly to moisture absorbent materials. Moreover, the plasma treatment can be performed on nonconducting substrates, eliminating the need for film transfer. From an applications perspective, the printed, plasma‐reduced RGO exhibits excellent electrical, mechanical, and electrochemical properties. As a technology demonstrator, the working electrodes of hydrogen peroxide (H2O2) sensors fabricated from plasma‐reduced GO show a sensitivity of 277 ± 80 µA mm−1 cm−2, which is comparable to RGO working electrodes made by electrochemical reduction.

show abstract

Section: Introductionmentioning

confidence: 99%

Electrically Conductive, Reduced Graphene Oxide Structures Fabricated by Inkjet Printing and Low Temperature Plasma Reduction

Sui

Hess-Dunning

Wei

et al. 2019

Adv Materials Technologies

View full text Add to dashboard Cite

show abstract

“…21 The GO thin films of various thicknesses (continuously changing between edge and center of the sample in the range of 20-100 nm) were obtained by spin-coating water solution of GO on a 40 nm thick Pt film on Si substrate. Standard Pt covered LC-AFM tips served both for imaging and as a top electrode.…”

mentioning

confidence: 99%

“…Moreover, a decrease of concentration of functionalities is observed, which is an indication of reduction GO to rGO. 21 Observed transition between OFF and ON states is a signature of the RS process occurring in GO layers. In order to determine what are the main factors influencing the RS process, we decided to investigate its efficiency (diameter d of ON region created after PM) as a function of atmosphere composition.…”

mentioning

confidence: 99%

The role of water in resistive switching in graphene oxide

Rogala

Kowalczyk

Dąbrowski

et al. 2015

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Published by the AIP PublishingArticles you may be interested in Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films Appl. Phys. Lett. 105, 153111 (2014); 10.1063/1.4898601Forming free resistive switching in graphene oxide thin film for thermally stable nonvolatile memory applicationsThe resistive switching processes are investigated at the nano-scale in graphene oxide. The modification of the material resistivity is driven by the electrical stimulation with the tip of atomic force microscope. The presence of water in the atmosphere surrounding graphene oxide is found to be a necessary condition for the occurrence of the switching effect. In consequence, the switching is related to an electrochemical reduction. Presented results suggest that by changing the humidity level the in-plane resolution of data storage process can be controlled. These findings are essential when discussing the concept of graphene based resistive random access memories. V C 2015 AIP Publishing LLC. [http://dx.

show abstract

“…[12,[14][15][16][17][18] Generally, 2D material inks show similar drying behavior to inks made from nanoparticles or nanotubes, i.e. under appropriate drying conditions they show a clear coffee ring with the 2D flakes or 1D tubes arranged at the contact line forming a characteristic ringlike structure.…”

mentioning

confidence: 99%

“…under appropriate drying conditions they show a clear coffee ring with the 2D flakes or 1D tubes arranged at the contact line forming a characteristic ringlike structure. [14,15] Ring formation can be suppressed, for example, by using two solvents [16,17] or adding surfactant and a high boiling point solvent. Recent work by Kim et al identified both an effect of size and an effect of temperature on the transition to a coffee ring during the drying of suspensions of graphene oxide (GO), [19] with higher drying temperatures suppressing coffee ring formation and a slightly lower critical temperature for ring suppression with inks containing larger GO flakes.…”

mentioning

confidence: 99%

Controlling Coffee Ring Formation during Drying of Inkjet Printed 2D Inks

Derby

2017

Adv Materials Inter

View full text Add to dashboard Cite

There have been several reports of the deposition of graphene dispersions and other 2D materials using inkjet printing. [12,[14][15][16][17][18] Generally, 2D material inks show similar drying behavior to inks made from nanoparticles or nanotubes, i.e. under appropriate drying conditions they show a clear coffee ring with the 2D flakes or 1D tubes arranged at the contact line forming a characteristic ringlike structure. [14,15] Ring formation can be suppressed, for example, by using two solvents [16,17] or adding surfactant and a high boiling point solvent. Recent work by Kim et al. identified both an effect of size and an effect of temperature on the transition to a coffee ring during the drying of suspensions of graphene oxide (GO), [19] with higher drying temperatures suppressing coffee ring formation and a slightly lower critical temperature for ring suppression with inks containing larger GO flakes.Here, we further study the influence of flake size, substrate temperature, and drop size on the morphology of dried droplets of a GO ink. GO is an appropriate model ink because of its ease of dispersal in water and that it is possible to make inks with a wide range of flake sizes showing a common mean flake thickness with little variance. [20] The critical flake size for ring/no ring transition decreases as the substrate (drying) temperature increases. A decrease in the critical flake size also occurs when smaller drop diameters were used. We show that this behavior is governed by hysteresis between the advancing and receding contact angle caused by contact line pinning from heterogeneities in the surface energy or profile (roughness). [21,22] At the onset of drying, the diameter of the drop does not change but the contact angle reduces. The contact line becomes pinned if there is sufficient deposition of solute at the contact line to prevent detachment once the receding contact angle for the substrate is reached. [23] The onset of a coffee ring during drying drops of GO inks is consistent with a model for contact line pinning that compares characteristic time constants for flake aggregation and for the transition from the equilibrium to the receding contact angle.Inkjet printing was used to provide single sessile drops on Si/SiO 2 substrates from aqueous inks containing GO flakes of different sizes. Figure 1 shows the particle size distribution for the eight inks (GO-0-GO-7) used in this study; the mean particle size ranges from 0.68 to 35.9 µm. Sample scanning electron microscopy (SEM) images of the flakes and atomic force microscopy (AFM) height profiles are presented in the Supporting Information showing that the majority of the flakes The morphology of drops of graphene oxide (GO) inks produced by inkjet printing shows a distinctive coffee ring after drying when the mean diameter of the GO is below a critical size. Inks with larger diameter flakes do not show a coffee ring and the transition mean flake diameter decreases as the substrate temperature increases and when the printed drop size decreases. This be...

show abstract

Graphene oxide overprints for flexible and transparent electronics

Cited by 42 publications

References 30 publications

Electrically Conductive, Reduced Graphene Oxide Structures Fabricated by Inkjet Printing and Low Temperature Plasma Reduction

Electrically Conductive, Reduced Graphene Oxide Structures Fabricated by Inkjet Printing and Low Temperature Plasma Reduction

The role of water in resistive switching in graphene oxide

Controlling Coffee Ring Formation during Drying of Inkjet Printed 2D Inks

Contact Info

Product

Resources

About