Graphene-oxide-based resistive switching device for flexible nonvolatile memory application

Lin, Chun‐Chieh; Wu, Hsiao-Yu; Lin, Nian-Cin

doi:10.7567/jjap.53.05fd03

Cited by 17 publications

(15 citation statements)

References 35 publications

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“…Some works consider the switching behavior to be related to a bulk effect, meaning a structural modification of the entire GO layer. 28,37,40 Other works, however, associate the switching with interface dominated phenomena. For example, in the Al/GO/Al structure, Jeong et al 24 and Kim et al 33 explained switching in terms of the presence of an AlO x interfacial layer between the top (Al) electrode and the GO film and in which switching events were caused by the formation and de-formation of Al metallic nanofilaments.…”

mentioning

confidence: 99%

Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide–Titanium Oxide Memories

et al. 2017

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Graphene oxide (GO) resistive memories offer the promise of low-cost environmentally sustainable fabrication, high mechanical flexibility and high optical transparency, making them ideally suited to future flexible and transparent electronics applications. However, the dimensional and temporal scalability of GO memories, i.e., how small they can be made and how fast they can be switched, is an area that has received scant attention. Moreover, a plethora of GO resistive switching characteristics and mechanisms has been reported in the literature, sometimes leading to a confusing and conflicting picture. Consequently, the potential for graphene oxide to deliver high-performance memories operating on nanometer length and nanosecond time scales is currently unknown. Here we address such shortcomings, presenting not only the smallest (50 nm), fastest (sub-5 ns), thinnest (8 nm) GO-based memory devices produced to date, but also demonstrate that our approach provides easily accessible multilevel (4-level, 2-bit per cell) storage capabilities along with excellent endurance and retention performance-all on both rigid and flexible substrates. Via comprehensive experimental characterizations backed-up by detailed atomistic simulations, we also show that the resistive switching mechanism in our Pt/GO/Ti/Pt devices is driven by redox reactions in the interfacial region between the top (Ti) electrode and the GO layer.

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mentioning

confidence: 99%

Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide–Titanium Oxide Memories

et al. 2017

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“…By now, only few materials exhibit a resistive switching behavior can be used for fabrication of memory cells in the field of flexible and printed electronics. Graphene oxide is a material that is used most frequently [28,29]; however, under the action of electric field and temperature this material looses oxygen-containing functional groups and, for this reason, graphene-oxide-based devices will most likely turn to be unstable. Besides, as it was noted above, graphene oxide layers normally exhibit large leakage currents.…”

Section: Composite Films Exhibiting a Resistive Switching Behaviormentioning

confidence: 99%

Graphene/Fluorinated Graphene Systems for a Wide Spectrum of Electronics Application

Antonova¹,

Ia²,

Kurkina³

et al. 2017

J Material Sci Eng

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Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree, composite graphene:PEDOT:PSS layers were shown. Extraordinary properties of FG as an insulating layer for graphene-based heterostructures at fluorination degree above 30% were demonstrated. It is shown that the leakage current in thin (20-40 nm) films is normally smaller than 10 -8 A/cm 2 , the breakdown field being greater than 10 8 V/cm. In hybrid structures with printed FG layers in which graphene was transferred onto, or capsulated with, an FG layer, an increase in charge-carrier mobility and material conductivity amounting to 5-6 times was observed. The spectrum of future applications of FG layers can be further extended due to the possibility of obtaining, from weakly fluorinated graphene (<20%), functional layers exhibiting a negative differential resistance behavior and, at fluorination degrees of 20-23%, field-effect-transistor channels with current modulation reaching several orders. Composite or bilayer films based on fluorographene and V 2 O 5 or polyvinyl alcohol exhibit a stable resistive switching behavior. On the whole, graphene/FG heterostructures enjoy huge potential for their use in a wide spectrum of application, including flexible electronics.

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“…Особый интерес представляет создание печатных устройств памяти, одним из перспективных направлений считается резистивная память из материалов на основе графена. Существует ряд работ, описывающих резистив-ные переключения в плeнках оксида графена [5][6][7], но это нестабильный материал и устройства на его основе, скорее всего, будут недолговечны.…”

Section: Introductionunclassified

Механизм резистивных переключений в плeнках на основе частично фторированного графена

Иванов¹,

Небогатикова²,

Куркина³

et al. 2017

Физика И Техника Полупроводников

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Исследован механизм резистивных переключений в плeнках частично фторированного графена. Пленки были получены на основе ряда графеновых суспензий с разным составом и различной степенью фторирования. Экспериментально обнаружена зависимость величины резистивных переключений от наличия в составе суспензии органических добавок (N-метилпирролидон и диметилформамид) и степени фторирования. Показано, что для плeнок, полученных из суспензии без органических составляющих, резистивные переключения не наблюдаются вне зависимости от степени фторирования. Максимальный эффект, ~10-20 раз, обнаружен для плeнок, содержащих диметилформамид. Предложена физическая модель пленок, согласно которой наблюдаемая зависимость связана с наличием в исследованных плeнках капсулированных функциональных групп, образованных из молекул диметилформамида, проявляющих электрическую активность. Измеренные вольт-амперные характеристики пленок наилучшим образом описываются моделью Френкеля-Пула с энергией активации центров 0.08 эВ, ответственных за проводимость. Величина переключений зависит от степени фторирования исходных суспензий. Максимальный эффект наблюдается при степени фторирования суспензии ~ CF0.25. Исследованные в работе суспензии частично фторированного графена подходят для создания приборных структур при помощи 2D-печати. DOI: 10.21883/FTP.2017.10.45013.8498

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Graphene-oxide-based resistive switching device for flexible nonvolatile memory application

Cited by 17 publications

References 35 publications

Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide–Titanium Oxide Memories

Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide–Titanium Oxide Memories

Graphene/Fluorinated Graphene Systems for a Wide Spectrum of Electronics Application

Механизм резистивных переключений в плeнках на основе частично фторированного графена

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