Graphene nanoribbon as a negative differential resistance device

Ren, Hao; Li, Qunxiang; Luo, Yi; Yang, Jinlong

doi:10.1063/1.3126451

Cited by 218 publications

(137 citation statements)

References 24 publications

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“…This choice was also adopted in the transport calculations of carbon systems by other authors. 18,19 The resolution of the real space grid is determined by an equivalent plane wave cutoff of 200 Ry. The exchange-correlation potential is at the LDA level in the form of Perdew-Zunger.…”

Section: Calculation Detailsmentioning

confidence: 99%

Effects induced by single and multiple dopants on the transport properties in zigzag-edged graphene nanoribbons

et al. 2009

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The effects of boron and nitrogen doping on the transport properties of zigzag-edged graphene nanoribbons ͑ZGNRs͒ with antiferromagnetically coupled edge states are investigated by first-principles electronic structure combined with a nonequilibrium Green's function technique. Specifically, the effects produced by single and multiple impurities as a function of their distance from the edges are analyzed. It is found that the introduction of single B or N atoms induces bound states and quasibound states in ZGNRs, which can be observed as dips or peaks in the electron transmission function. In particular, the transmission channel associated to the edge states is strongly suppressed when the impurities are close to the edges. Multiple impurities in general interfere and modify further the transmission function. However, if the impurities are placed at positions such that the associated bound and quasibound states appear at opposite sides of the Fermi level, then the transmission can be rationalized as a simple superposition of the transmission function of individually doped ribbons. Finally, an interesting situation appears for B and N codoping, since fully spin-polarized transmission peaks are generated at energies corresponding to the ribbon gap. This offers the hope of using such nanoribbons for low-bias spin-polarized tunneling in spintronics applications.

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Section: Calculation Detailsmentioning

confidence: 99%

Effects induced by single and multiple dopants on the transport properties in zigzag-edged graphene nanoribbons

et al. 2009

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“…However, for integrated circuits a low bias mV regime is desirable to reduce power consumption 46 . Low bias NDR can also be achieved in other graphene and bilayer graphene systems [31][32][33] . In this work we consider an N -barrier superlattice potential on a semiconducting armchair graphene nanorib- bon (aGNR), Fig.…”

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confidence: 99%

Low-bias negative differential resistance in graphene nanoribbon superlattices

et al. 2011

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We theoretically investigate negative differential resistance (NDR) for ballistic transport in semiconducting armchair graphene nanoribbon (aGNR) superlattices (5 to 20 barriers) at low bias voltages VSD < 500 mV. We combine the graphene Dirac hamiltonian with the Landauer-Büttiker formalism to calculate the current ISD through the system. We find three distinct transport regimes in which NDR occurs: (i) a "classical" regime for wide layers, through which the transport across bandgaps is strongly suppressed, leading to alternating regions of nearly unity and zero transmission probabilities as a function of VSD due to crossing of bandgaps from different layers. (ii) a quantum regime dominated by superlattice miniband conduction, with current suppression arising from the misalignment of miniband states with increasing VSD; and (iii) a Wannier-Stark ladder regime with current peaks occurring at the crossings of Wannier-Stark rungs from distinct ladders. We observe NDR at voltage biases as low as 10 mV with a high current density, making the aGNR superlattices attractive for device applications.

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“…Currently, the theoretical predictions of NDR pertaining to graphene appear to prevail [47][48][49], and only a few experimental observations of NDR are presented in the literature (in fact, NDR is experimentally observed in lateral structures only in Ref. [50]).…”

Section: Films With Negative Differential Resistancementioning

confidence: 99%

Fluorinated Graphene Dielectric and Functional Layers for Electronic Applications

Antonova¹,

Nebogatikova²

2017

Graphene Materials - Advanced Applications

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Future electronics technology is expected to develop from rigid to flexible devices. This process requires breakthroughs in material properties, especially flexibility, in combination with desirable electrical insulating, semiconducting, or metallic properties. Graphene, being one of the recently developed two-dimensional (2D) materials, presents great promise as an active layer in a wide spectrum of electronics devices and, first of all, in field-effect transistors (FET). The development of optimized dielectrics for the graphene active layer is critical for graphene applications. The carrier transport in graphene films takes place at interfaces with dielectric or semiconductor substrates; therefore, the quality of such interface and the interaction of graphene films with nearby dielectric layers (charge carrier scattering) determine the device performance. Generally, the development of dielectric materials aiming at high performance device operation, proper mechanical properties, and low-temperature fabrication is not progressing well since the graphene thin film is very sensitive to surface conditions of dielectric layers. Solving the problem with dielectric layers in the case of nonorganic printed and flexible electronics is especially acute. As it is demonstrated in the present chapter, dielectric layers fabricated from fluorinated graphene suspension or in its combination with graphene oxide are the most promising for graphene-based flexible, printed, and transparent electronics.

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Graphene nanoribbon as a negative differential resistance device

Cited by 218 publications

References 24 publications

Effects induced by single and multiple dopants on the transport properties in zigzag-edged graphene nanoribbons

Effects induced by single and multiple dopants on the transport properties in zigzag-edged graphene nanoribbons

Low-bias negative differential resistance in graphene nanoribbon superlattices

Fluorinated Graphene Dielectric and Functional Layers for Electronic Applications

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