2014
DOI: 10.1088/0022-3727/47/50/505105
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Graphene nanoelectromechanical resonators for the detection of modulated terahertz radiation

Abstract: Abstract. We propose and analyze the detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with mechanically floating gate made of graphene as well. The THz component of incoming radiation induces resonant excitation of plasma oscillations in graphene layers (GLs). The rectified component of the ponderomotive force between GLs invokes resonant mechanical swinging of top GL, resulting in the drain current oscillations. To estimate the device responsivity, we solve the hyd… Show more

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Cited by 10 publications
(5 citation statements)
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References 34 publications
(42 reference statements)
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“…The energy per operation for micro-resonator adders is one to two orders of magnitude lower than the CMOS counterparts, up to the operation frequency of a few MHz. It's worth mentioning that the speed can be increased to GHz by choosing the right material and design of a resonator with THz resonance frequency [16]. The proposed design methodology could also be applied to optical resonators reporting 10 Gbps speed [17].…”
Section: Totalmentioning
confidence: 99%
“…The energy per operation for micro-resonator adders is one to two orders of magnitude lower than the CMOS counterparts, up to the operation frequency of a few MHz. It's worth mentioning that the speed can be increased to GHz by choosing the right material and design of a resonator with THz resonance frequency [16]. The proposed design methodology could also be applied to optical resonators reporting 10 Gbps speed [17].…”
Section: Totalmentioning
confidence: 99%
“…al. [14] have proposed a scheme with suspended graphene FET, where they take advantage of the plasma resonance that naturally occurs at THz frequencies for short graphene devices. The results so far have remained inferior to the current state-of-the-art bolometers based on superconducting detectors, which reach noise equivalent powers (NEP) around 10 fW/Hz 1/2 in the 0.2 -1.0 THz band at T = 4.2 K [15] and below 1 aW/Hz 1/2 at 20 mK [16].…”
Section: Introductionmentioning
confidence: 99%
“…That is because of their superior unique properties. Different nanostructures were produced and their properties like structural, electrical, optical, magnetic, mechanical and dosimetric were studied [1][2][3][4][5][6]. Moreover, large number of these nanostructures were evaluated for different applications.…”
Section: Introductionmentioning
confidence: 99%