Graphene/MoS₂ Hybrid Technology for Large-Scale Two-Dimensional Electronics

Abstract

Two-dimensional (2D) materials have generated great interest in the past few years as a new toolbox for electronics. This family of materials includes, among others, metallic graphene, semiconducting transition metal dichalcogenides (such as MoS2), and insulating boron nitride. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. In this paper, we demonstrate a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition. We have fabricated high-performance devices and circuits based on this heterostructure, where MoS2 is used as the transistor channel and graphene as contact electrodes and circuit interconnects. We provide a systematic comparison of the graphene/MoS2 heterojunction contact to more traditional MoS2-metal junctions, as well as a theoretical investigation, using density functional theory, of the origin of the Schottky barrier height. The tunability of the graphene work function with electrostatic doping significantly improves the ohmic contact to MoS2. These high-performance large-scale devices and circuits based on this 2D heterostructure pave the way for practical flexible transparent electronics.

Graphene–MoS2 hybrid nanostructures enhanced surface plasmon resonance biosensors

“…Two-dimensional (2D) nanomaterials have received great attention from the nanotechnology community in recent years due to their potential applications ranging from transistors to photodetectors [1][2][3][4][5][6][7][8][9][10]. For example, graphene is one of the most extensively studied 2D nanomaterial to date since its first discovery in 2004 [11].…”

“…These 2D crystals composed of two-dimensional layers stacked in the vertical direction via van der Waals force. Similar to graphene, monolayer MoS 2 can be prepared by micromechanical cleavage or synthesized using chemical vapor deposition (CVD) method [8,34]. When the thickness of MoS 2 crystal is thinned down to monolayer (~0.65nm), a new set of electronic and optical property can be obtained.…”

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

“…Two-dimensional (2D) crystals, including graphene, hexagonal boron nitride and transition metal dichalcogenides (TMD), have outstanding properties for developing the next generation of electronic devices [1][2][3][4][5][6][7] . Their extreme thinness, down to a single layer, allows almost perfect electrostatic control of the transistor channel, making them robust to short channel effects and ideal for low power applications 8 .…”

Growth of Transition Metal Dichalcogenides and Directly Modulating Their Properties by Chemical Vapor Deposition

“…Except for combination between TMDs, separately grow TMDs and other layered materials is effective to form heterostructures. MoS2 can be grown on CVD grown h-BN film [107] or graphene [108][109][110][111][112][113] to form vertical heterostructures. Large area heterostructure film is promising in mass scale integration applications including FET arrays, Hall bar arrays, inverters, tunneling devices, etc.…”

“…Large area heterostructure film is promising in mass scale integration applications including FET arrays, Hall bar arrays, inverters, tunneling devices, etc. [112] Besides, other method such as molecular beam epitaxy (MBE), combined with CVD, can also realize other van del Waals heterostructures. [114][115][116][117][118] It should be noted that diverse TMDs can form diverse heterostructures, and more novel properties are still needed to be investigated further.…”