Accurate and simple local strain assessment in graphene is one of the crucial tasks in device characterization. Raman spectroscopy is often used for that purpose through monitoring of the G and 2D modes. However, the shifts of those two bands might be biased, especially under uniaxial strain, by the effects of charge-transfer doping. Therefore, it is extremely desirable to use another Raman band, less affected by doping, but with a defined and measurable behavior under strain.The Raman 2D' mode is in this sense the ideal feature for the evaluation of strain levels in stretched graphene monolayers, suitable for this task even under different experimental conditions. The sensitivity and accuracy of the approach through 2D' mode is on the same level as through the G mode, however, the clear advantage of the 2D' arises when doping effects are present in the sample.On top of that, since the value the 2D' splitting is used for the strain level quantification, and not the shift rates of the components, the doping effects should not influence this value even if present. The close proximity of our value, incl. a small 95% confidence interval, to the one predicted in 38 points to the viability of both the presented experimental and previous theoretical 38 results.
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