2010
DOI: 10.1149/1.3485611
|View full text |Cite
|
Sign up to set email alerts
|

"Graphene-Like" Exfoliation of Atomically-Thin Films of Bi2Te3 and Related Materials: Applications in Thermoelectrics and Topological Insulators

Abstract: We report on "graphene-like" exfoliation of the large-area crystalline films and ribbons of bismuth telluride with the thicknesses of a few atoms. It is demonstrated that Bi 2 Te 3 crystal can be mechanically separated into its building blocks -Te-Bi-Te-Bi-Te atomic five-foldswith the thickness of ~1 nm and even furtherto subunits with smaller thicknesses. The atomically-thin films can be structured into suspended crystalline ribbons providing quantum confinement in two dimensions. The quasi two-dimensional cr… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
3
0

Year Published

2017
2017
2023
2023

Publication Types

Select...
4
3

Relationship

0
7

Authors

Journals

citations
Cited by 7 publications
(3 citation statements)
references
References 48 publications
(127 reference statements)
0
3
0
Order By: Relevance
“…Symmetry wise, the p -bands associated with B and AB levels at Γ and A points transform as the IREPs of the double space groups ( ), 19 , 20 . Because of the phase introduced, the B-AB splitting of the p z -states decreases from the Γ to the A point 13 . This induces strong k z dispersion and a large bandwidth for p z -derived bands as compared to planar p x,y orbitals.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Symmetry wise, the p -bands associated with B and AB levels at Γ and A points transform as the IREPs of the double space groups ( ), 19 , 20 . Because of the phase introduced, the B-AB splitting of the p z -states decreases from the Γ to the A point 13 . This induces strong k z dispersion and a large bandwidth for p z -derived bands as compared to planar p x,y orbitals.…”
Section: Resultsmentioning
confidence: 99%
“…Given that TMDs are being increasingly incorporated into device structures [12][13][14][15][16][17] , it is highly desirable to identify a candidate material whose transport properties might be predominantly derived from topologically protected states. An intriguing candidate in this regard is NiTe 2 .…”
mentioning
confidence: 99%
“…TI is a general concern of science because its discovery is of great value to basic physics research and many semiconductor devices [ 4 ]. TI is another significant discovery after graphene, which will inevitably lead to the upsurge of research in the scientific community [ 5 ].…”
Section: Introductionmentioning
confidence: 99%