Graphene interconenets selectively grown on catalytic metal damascene structure and its growth mechanism on Ni catalyst

Wada, Makoto; Ishikura, Takeshi; Nishide, Daisuke; Ito, Ban; Yamazaki, Yoichi; Saito, Tatsuro; Isobayashi, Atsunobu; Kagaya, Munehito; Matsumoto, Takashi; Kitamura, Masayuki; Sakata, A.; Watanabe, Minoru; Sakuma, Naoko; Kajita, Akihiro; Sakai, Tadashi

doi:10.1109/iitc.2013.6615599

Cited by 3 publications

(9 citation statements)

References 2 publications

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“…This result may account for the higher resistance of MLG of process A shown in Fig. 7(e), implying that higher G/D ratio corresponds to better quality and higher conductivity of MLG, which is in agreement with our previous investigations [2][3][4][5].…”

Section: Process Dependence Of Mlg By C-afm and Raman Spectrasupporting

confidence: 91%

“…The cross-sectional TEM image of MLG in Fig. 1(b) demonstrates successful crystalline MLG formation on a Ni catalyst layer [5].…”

Section: Introductionmentioning

confidence: 97%

“…Despite the promising properties of graphene as an interconnect material, LSI compatible processes still remains difficult. Recently, we fabricated graphene/Ni stacked interconnect structures by using a damascene process at a sufficiently low temperature (500 ºC) [2][3][4][5]. Although we were able to confirm the MLG structure by transmission electron microscopy (TEM), scanning electron microscope (SEM) and Raman analysis, it remains impossible to separate the resistance of MLG from the underlying Ni catalyst by routine electrical measurements.…”

Section: Introductionmentioning

confidence: 98%

“…EXPERIMENTAL SETUP MLG sheets were grown on Ni-damascene interconnects on 300-mm wafers by chemical vapor deposition (CVD) at 500 ºC using a C 2 H 4 source gas [2,5]. Figure 1 shows (a) the sample preparation procedure, (b) the MLG/Ni structure with a TEM image, and (c) the schematic circuit for C-AFM measurement.…”

Section: Introductionmentioning

confidence: 99%

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Imaging and nanoprobing of graphene layers on Ni damascene interconnects by conductive atomic force microscopy

Zhang

Ishikura

Wada

et al. 2014

2014 IEEE International Reliability Physics Symposium

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Graphene is a promising material to replace copper interconnect metallization under 10 nm in width. We report a method for evaluating graphene interconnect wiring structure by conductive atomic force microscopy (C-AFM), which enables direct measurement of the 2D-resistance distribution and coverage evaluation of multilayer graphene (MLG) grown on Ni interconnects using a 300 mm damascene process. It is demonstrated that the coverage of MLG upon Ni can be estimated more precisely by C-AFM than that by back-scattered electron scanning electron microscopy (BSE-SEM) observation. We also measured the resistance of the MLG/Ni conductor and confirmed conduction paths of the MLG/Ni interconnect. Process dependence of MLG shows that lower local resistance corresponds to higher G band and D band intensity ratio (G/D ratio) in Raman spectra. C-AFM is demonstrated to be a potential technique for local conductance evaluation of next generation interconnects.

show abstract

Section: Process Dependence Of Mlg By C-afm and Raman Spectrasupporting

confidence: 91%

“…The cross-sectional TEM image of MLG in Fig. 1(b) demonstrates successful crystalline MLG formation on a Ni catalyst layer [5].…”

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Imaging and nanoprobing of graphene layers on Ni damascene interconnects by conductive atomic force microscopy

Zhang

Ishikura

Wada

et al. 2014

2014 IEEE International Reliability Physics Symposium

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“…Among them, graphene nanoribbons (GNRs) have attracted much attention in regard to interconnect applications. [5][6][7][8] The electronic properties of GNRs are determined by the width and edge structure, 9,10) i.e., zigzag-edge graphene nanoribbons (ZGNRs) or armchair-edge graphene nanoribbons (AGNRs). Whereas the ZGNRs exhibit unique transport properties originating from a high density of states at the Fermi level, AGNRs have a band gap.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of chemical-edge-doping effect on transport properties of armchair-edge graphene nanoribbons

Nishida

Yoshida

Aiga

et al. 2014

Jpn. J. Appl. Phys.

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We have investigated the electronic transport of graphene nanoribbons (GNRs) with armchair edges containing boron, nitrogen, or oxygen, using the first-principles density functional theory. We found that such dopants at edge sites provided the n- or p-type doping effect for armchair graphene nanoribbons (AGNRs). As a result, even under an applied bias potential lower than the band gap energy of pristine AGNR, the nitrogen edge-doped GNRs show a large conductance that is almost the same as that of the ideal zigzag GNRs.

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Imaging and nanoprobing of graphene layers for interconnects by conductive atomic force microscopy

Zhang¹,

Katagiri²,

Ishikura

et al. 2015

Jpn. J. Appl. Phys.

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Graphene is a promising material to replace Cu-interconnect metallization under a width of 10 nm. We report a method for evaluating the graphene interconnect wiring structure by conductive atomic force microscopy (C-AFM), which enables the direct measurement of the two-dimensional (2D) resistance distribution and the coverage evaluation of multilayer graphene (MLG) grown on Ni interconnects using a 300 mm damascene process. The resistivity of exfoliated two-layer graphene was measured and a reasonable value of 30 µΩ·cm was obtained. We also measured the resistance of the MLG/Ni stack of 350 nm L/S patterns and confirmed the conduction paths of the MLG/Ni stack. It is demonstrated that the coverage of MLG on Ni interconnects can be estimated more precisely by C-AFM than by backscattered electron scanning electron microscopy (BSE-SEM) observation. C-AFM is demonstrated to be a potential technique for the local conductance evaluation of next-generation interconnects.

show abstract

Graphene interconenets selectively grown on catalytic metal damascene structure and its growth mechanism on Ni catalyst

Cited by 3 publications

References 2 publications

Imaging and nanoprobing of graphene layers on Ni damascene interconnects by conductive atomic force microscopy

Imaging and nanoprobing of graphene layers on Ni damascene interconnects by conductive atomic force microscopy

First-principles study of chemical-edge-doping effect on transport properties of armchair-edge graphene nanoribbons

Imaging and nanoprobing of graphene layers for interconnects by conductive atomic force microscopy

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