Graphene-Integrated Negative Quantum Capacitance Field-Effect Transistor With Sub-60-mV/dec Switching

Zhu, Hao; Yang, Yafen; Zhu, Xinyi; Raju, Parameswari; Ioannou, D.E.; Li, Qiliang

doi:10.1109/ted.2023.3294365

Cited by 1 publication

(2 citation statements)

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“…The equivalent electronic circuit illustrating the capacitive components of the gate stack is shown in Figure 9 b. NQCFETs operate on the principle of negative quantum capacitance, where adding charge carriers decreases the system’s overall energy. This mechanism may lower the subthreshold swing (the voltage required to increase the current by an order of magnitude in the subthreshold region) below the thermal limit of 60 mV/decade [ 126 ]. This limit is a fundamental constraint for conventional FETs.…”

Section: Future Directionmentioning

confidence: 99%

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Comprehensive Study and Design of Graphene Transistor

Cai,

Ye,

Jahannia

et al. 2024

Micromachines

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Graphene, renowned for its exceptional electrical, optical, and mechanical properties, takes center stage in the realm of next-generation electronics. In this paper, we provide a thorough investigation into the comprehensive fabrication process of graphene field-effect transistors. Recognizing the pivotal role graphene quality plays in determining device performance, we explore many techniques and metrological methods to assess and ensure the superior quality of graphene layers. In addition, we delve into the intricate nuances of doping graphene and examine its effects on electronic properties. We uncover the transformative impact these dopants have on the charge carrier concentration, bandgap, and overall device performance. By amalgamating these critical facets of graphene field-effect transistors fabrication and analysis, this study offers a holistic understanding for researchers and engineers aiming to optimize the performance of graphene-based electronic devices.

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Section: Future Directionmentioning

confidence: 99%

“… ( a ) Schematic of an NQCFET structure utilizing both MoS 2 and graphene 2D materials [ 126 ]. ( b ) Capacitive components of the gate stack as represented by an equivalent electronic circuit.…”

Section: Figurementioning

confidence: 99%