Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible Electronics

Abstract

The structure and electric properties of hexagonal boron nitride (h-BN):graphene composite with additives of the conductive polymer PEDOT:PSS and ethylene glycol were examined. The graphene and h-BN flakes synthesized in plasma with nanometer sizes were used for experiments. It was found that the addition of more than 10−3 mass% of PEDOT:PSS to the graphene suspension or h-BN:graphene composite in combination with ethylene glycol leads to a strong decrease (4–5 orders of magnitude, in our case) in the resistance of the films created from these suspensions. This is caused by an increase in the conductivity of PEDOT:PSS due to the interaction with ethylene glycol and synergetic effect on the composite properties of h-BN:graphene films. The addition of PEDOT:PSS to the h-BN:graphene composite leads to the correction of the bonds between nanoparticles and a weak change in the resistance under the tensile strain caused by the sample bending. A more pronounced flexibility of the composite films with tree components is demonstrated. The self-organization effects for graphene flakes and polar h-BN flakes lead to the formation of micrometer sized plates in drops and uniform-in-size nanoparticles in inks. The ratio of the components in the composite was found for the observed strong hysteresis and a negative differential resistance. Generally, PEDOT:PSS and ethylene glycol composite films are promising for their application as electrodes or active elements for logic and signal processing.

Graphene-based multifunctional humidity sensors with an ultrahigh current response

“…The sensor sensitivity for structures with Δ R < 0 is determined by . 21,22 Alternatively, it is possible to estimate the sensitivity using the conductivity response. 23,24 In this case, , and we obtained the same sensitivity value as in the case of Δ R < 0.…”

“…Boron nitride, in turn, also rearranges the pore structure, which affects the electric resistance of sensors under study and the interaction between the surface of sensors and compounds being diagnosed. 21 The physical model of our humidity sensor is as follows. Water molecule adsorption on traps at grain boundary defects in CVD graphene is demonstrated to lead to an increase in the This study S is the sensor sensitivity value.…”

“…A more detailed description of the graphene and h-BN flake synthesis process is given in ref. 21. The main steps of sensor fabrication are described below.…”

“…In the case in which the sensor resistivity is increased with the increase of humidity, the sensitivity is usually determined by S ¼ DR R 0 DRH %. The sensor sensitivity for structures with 21,22 Alternatively, it This journal is © the Owner Societies 2024 is possible to estimate the sensitivity using the conductivity response. 23,24 In this case, S ¼ DI I 0 DRH %, and we obtained the same sensitivity value as in the case of DR o 0.…”

Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation

“…Such a selective materials-processing opportunity is not available with equilibrium-based approaches. Innovations in growing customized 2D h-BN and its nanoflakes for specific applications are in high demand for the development of next-generation integrated devices [ 16 ]. These limitations have prompted research into nonequilibrium ways to fabricate 2D materials at near-ambient temperatures [ 17 , 18 ].…”