Graphene field effect transistor as radiation sensor

Patil, Ashwini; Koybasi, O.; López, G.A.; Foxe, Michael; Childres, Isaac; Roecker, Caleb; Boguski, J.; Gu, Jiangjiang; Bolen, Michael; Capano, Michael A.; Jovanovic, Igor; Ye, P.; Chen, Y. P.

doi:10.1109/nssmic.2011.6154538

Cited by 23 publications

(23 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The empirical resistance-voltage model for graphene field effect transistor, GFET X-ray radiation sensor has been validated and agrees well with experimental data from Patil et al 16 for most of the V bg range in Figure 5.…”

Section: Proposed Model Of Gfet X-ray Sensorsupporting

confidence: 78%

“…11 12 This theoretical exploration show a method of extracting conductivity of single-layer graphene (SLG) nanoribbon given applied electric field 13 14 and project the parameter interrelationships. The proposed GFET based X-ray sensor model is built upon the experimental work carried out by of Foxe et al 15 and Patil et al 16 The empirical modeling of resistance-voltage (R-V ) model for GFET sensor is compared and verified * Author to whom correspondence should be addressed. against the existing experimental data.…”

Section: Introductionmentioning

confidence: 99%

“…against the existing experimental data. 16 Figure 1 shows a simplified layout of a GFET based X-ray sensor. The structure is consists of three main layer.…”

Section: Introductionmentioning

confidence: 99%

“…The absorber acts as a medium of ionization during the radiation and SiC is shown to have a good response with X-rays, gammaphotons, and light photons at room temperature. 16 Ionization of an absorber substance in a sensor shall induce an electric field change during the interactive of incoming radiation. By placing graphene next to the gamma-ray absorber, the electrical field change detected in the X-ray absorber influence the resistivity and current across the graphene surface.…”

Section: Introductionmentioning

confidence: 99%

“…Figure 2 illustrate the 28 digited data of R-V bg characteristic based on the experimental data in Ref. [16]. Given these finite set of data points, it is increased to 181 points through a one-dimensional data interpolation in MATLAB and illustrated as smooth lines in Figure 3.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Empirical Modeling of a Graphene Field-Effect Transistor Sensor

Chin

Haur

Tan³

2015

j comput theor nanosci

View full text Add to dashboard Cite

This theoretical nanoscience work explore the empirical method of extracting experimental radiation sensor data from published work and project the performance limit of the sensor in term of back gate voltage, resistance and radiation flux. We demonstrate an empirical regression modeling of an X-ray radiation sensor based on a graphene field effect transistor (GFET). The experimental data obtained from published work only showed the values of resistance, R versus back gate voltage, V bg for X-ray flux, E of 0 kV, 30 kV and 40 kV. Least Squares Estimation (LSE) in nonlinear regression model is utilized to obtain the individual polynomial regression model of resistance versus back gate voltage model for each of the 3 X-ray flux. LSE with multiple nonlinear regression incorporating with Nimmo and Atkinsmethod is employ to get a unified polynomial regression based on the individual model. The model is simulated in MATLAB and provide fast execution time. The unified model for is able to predict the resistance versus back gate voltage for various X-ray radiation flux beyond these three values given values. In addition to that, we are able to find the limit of X-ray flux based on the initial characteristic. Moreover, our technique enable one to visualize the interrelationship between R, V bg and E variables and perform multivariate analysis. The empirical regression model of GFET is shown to have good agreement with experimental data and theoretical prediction for multivariate such as back gate voltage, resistance and X-ray flux.

show abstract

Section: Proposed Model Of Gfet X-ray Sensorsupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

“…against the existing experimental data. 16 Figure 1 shows a simplified layout of a GFET based X-ray sensor. The structure is consists of three main layer.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Empirical Modeling of a Graphene Field-Effect Transistor Sensor

Chin

Haur

Tan³

2015

j comput theor nanosci

View full text Add to dashboard Cite

show abstract

Radiation effects on two-dimensional materials

Walker

Shi

Cruz‐Silva

et al. 2016

Phys. Status Solidi A

Self Cite

View full text Add to dashboard Cite

The effects of electromagnetic and particle irradiation on two‐dimensional materials (2DMs) are discussed in this review. Radiation creates defects that impact the structure and electronic performance of materials. Determining the impact of these defects is important for developing 2DM‐based devices for use in high‐radiation environments, such as space or nuclear reactors. As such, most experimental studies have been focused on determining total ionizing dose damage to 2DMs and devices. Total dose experiments using X‐rays, gamma rays, electrons, protons, and heavy ions are summarized in this review. We briefly discuss the possibility of investigating single event effects in 2DMs based on initial ion beam irradiation experiments and the development of 2DM‐based integrated circuits. Additionally, beneficial uses of irradiation such as ion implantation to dope materials or electron‐beam and helium‐beam etching to shape materials have begun to be used on 2DMs and are reviewed as well. For non‐ionizing radiation, such as low‐energy photons, we review the literature on 2DM‐based photo‐detection from terahertz to UV. The majority of photo‐detecting devices operate in the visible and UV range, and for this reason they are the focus of this review. However, we review the progress in developing 2DMs for detecting infrared and terahertz radiation.

show abstract

Solvation of Actinide Salts in Water Using a Polarizable Continuum Model

Kumar

Seminario

2015

J. Phys. Chem. A

View full text Add to dashboard Cite

In order to determine how actinide atoms are dressed when solvated in water, density functional theory calculations have been carried out to study the equilibrium structure of uranium plutonium and thorium salts (UO2(2+), PuO2(2+), Pu(4+), and Th(4+)) both in vacuum as well as in solution represented by a conductor-like polarizable continuum model. This information is of paramount importance for the development of sensitive nanosensors. Both UO2(2+) and PuO2(2+) ions show coordination number of 4-5 with counterions replacing one or two water molecules from the first coordination shell. On the other hand, Pu(4+), has a coordination number of 8 both when completely solvated and also in the presence of chloride and nitrate ions with counterions replacing water molecules in the first shell. Nitrates were found to bind more strongly to Pu(IV) than chloride anions. In the case of the Th(IV) ion, the coordination number was found to be 9 or 10 in the presence of chlorides. Moreover, the Pu(IV) ion shows greater affinity for chlorides than the Th(IV) ion. Adding dispersion and ZPE corrections to the binding energy does not alter the trends in relative stability of several conformers because of error cancelations. All structures and energetics of these complexes are reported.

show abstract

Graphene field effect transistor as radiation sensor

Cited by 23 publications

References 4 publications

Empirical Modeling of a Graphene Field-Effect Transistor Sensor

Empirical Modeling of a Graphene Field-Effect Transistor Sensor

Radiation effects on two-dimensional materials

Solvation of Actinide Salts in Water Using a Polarizable Continuum Model

Contact Info

Product

Resources

About