Graphene devices with bottom-up contacts by area-selective atomic layer deposition

Abstract

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Ultimate Spin Currents in Commercial Chemical Vapor Deposited Graphene

“…We do not rule out the contributions due to process-related device doping that could depend upon device structure and dimensions, which could also influence extrinsic doping levels in graphene. Nevertheless, our systematic dependencies are consistent with SCTD-induced variations in graphene devices 22 , 23 and suggest that the equilibrium doping concentration is guided by the longest continuous channel L (without intermediate contacts) in a particular device ( Figure S3 of the Supporting Information ). The contact resistances in our devices were measured in the standard three-terminal 3T bias configuration shown in Figure 1 a.…”

“…In particular, contacts can lead to surface charge transfer doping (SCTD), which could significantly shift the Dirac point ( V D ). 20 − 23 Furthermore, there is an ambiguity on how the spin injection–detection contact separation or the channel length L influences the spin parameters. Fabricating devices with very long channels (as shown in Figure 1 a) allows us to carefully probe the impact of SCTD and contact separation in graphene spin devices and their effects on performance and spin relaxation, and ultimate spin device engineering.…”

“…It is usually observed that once a clear spin transport is established with contacts overcoming the conductivity mismatch criteria, , electrostatic doping appreciably enhances spin transport in graphene. , This makes it interesting to see how inherent device doping controls spin transport. In particular, contacts can lead to surface charge transfer doping (SCTD), which could significantly shift the Dirac point ( V D ). − Furthermore, there is an ambiguity on how the spin injection–detection contact separation or the channel length L influences the spin parameters. Fabricating devices with very long channels (as shown in Figure a) allows us to carefully probe the impact of SCTD and contact separation in graphene spin devices and their effects on performance and spin relaxation, and ultimate spin device engineering.…”

Precise Definition of a “Monolayer Point” in Polymer Brush Films for Fabricating Highly Coherent TiO2 Thin Films by Vapor-Phase Infiltration

“…2 Kessels et al have incorporated area selective ALD approaches that use organic inhibitors with ALD precursors 38 , surface activation via reactive plasma micro patterning 39 and tuning the oxygen ALD cycle exposure to selectively nucleate platinum on wafer regions 40 . The research extends to area-selective ALD on graphene surfaces (resist free) 41 and ASD of ZnO by area activation using electron beam-induced deposition 42 . Mackus et al utilized several ASD approaches combined with ALD.…”

Effects of Wet Chemical Oxidation on Surface Functionalization and Morphology of Highly Oriented Pyrolytic Graphite

“…The conventional way of depositing films involves several lithography (top-down approach) steps that unfortunately leave contamination from the deposition process on the substrate material and edge placement errors. [15][16][17] Creating active surface sites (by area activation) allows for the elimination of lithography steps and for conformal deposition. 13 Activated areas can be created by producing regions of functional groups, without the need for protective films, where the areas without the reactive site are chemically inactive.…”