2014
DOI: 10.1134/s0021364013240119
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Graphene-based tunnel junction

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Cited by 14 publications
(12 citation statements)
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“…In this case, the only influence of gate voltage is to vary slightly the DOS near the Fermi level, which will result in a modest increase of the conductance. Our analysis shows that such behavior takes place in tunnel contacts with armchair boundaries where the local DOS of edge atoms coincides with that for bulk atoms at the Fermi level 32 .…”
supporting
confidence: 60%
“…In this case, the only influence of gate voltage is to vary slightly the DOS near the Fermi level, which will result in a modest increase of the conductance. Our analysis shows that such behavior takes place in tunnel contacts with armchair boundaries where the local DOS of edge atoms coincides with that for bulk atoms at the Fermi level 32 .…”
supporting
confidence: 60%
“…Relating x − to the instance of creation (which obviously occures inside a delta-pulse following the world line x + = 0), we can write dp x = eE L ∆x − | x + =0 ∼ 2eE L × T , where T is the total time of observation. Hence, in (17) we have…”
Section: Exact Solution For Collision With a Delta-pulsementioning
confidence: 98%
“…where the first term corresponds to the hopping of the electron between the nearest atoms with the characteristic hopping energy t = 2.8 eV, the second term to the next-nearest hopping with t ′ = 0.2 eV, and the last term corresponds to the tunneling between the nearest ribbons with the tunneling energy τ which can be varied (see Fig.1). Generally, τ should decrease exponentially with distance between the neighbouring ribbonsã τ ≈ t exp(−2(ã − a)/a) 28 , where a is the interatomic distance. We note that asã goes to infinity, the band structure and the conductivity should reduce to those of an individual nanoribbon.…”
Section: Band Structure Calculationmentioning
confidence: 99%