Graphene-based positron charge sensor

Or, P.; Dribin, D.; Devidas, T. R.; Zalic, Ayelet; Watanabe, Kenji; Taniguchi, Takashi; Beck, S. May-Tal; Ron, G.; Steinberg, Hadar

doi:10.1063/1.5053477

Cited by 5 publications

(3 citation statements)

References 15 publications

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“…Our beam is designed to combine DB measurements with sample conductivity. Previous research in our group showed the development of Graphene-based positron charge sensor [30], and we intend to continue this research using the slow positron beam. Currently, the beam configuration allows DB measurements at room temperature only, but simple modifications of the system will allow measurements under in-situ cooling or heating.…”

Section: Discussionmentioning

confidence: 99%

The SPOT-IL Positron Beam Construction and Its Use for Doppler Broadening Measurement of Titanium Thin Films

Or,

Erlichman,

Cohen

et al. 2020

Preprint

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The construction and first operation of the slow positron beam built at the Hebrew University is reported here. The beam follows a traditional design, using a 22 Na source, a Tungsten moderator, and a target cell equipped with a load-lock system for easy sample insertion. The beam energy varies between 0.03 keV and 30 keV. The detection system consists of two high purity Germanium detectors, facing each other, allowing low-background Doppler-Broadening (DB) measurements. Event readout is done using a state-of-the-art compact desktop system.The target cell is designed to allow a combined measurement of DB and sample conductivity, with the flexibility to add more detection options in the future.The beam has been successfully tested by using it to charecterize Titanium (Ti) films. Two 1.2 µm Ti films -as produced, and after annealing, were measured at various energies (2 keV -25 keV), and the results show consistent behavior with previous measurements.

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Section: Discussionmentioning

confidence: 99%

The SPOT-IL Positron Beam Construction and Its Use for Doppler Broadening Measurement of Titanium Thin Films

Or,

Erlichman,

Cohen

et al. 2020

Preprint

Self Cite

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“…Graphene resonators have been used as mass sensors [68][69][70][71][72], charge sensors [73][74][75] and extremely sensitive force sensors [76]. The 2D structure of graphene resonators, high surface area-to-mass ratio, and high operating frequencies make graphene resonators reliable for high precision mass sensing [11].…”

Section: Mass Sensorsmentioning

confidence: 99%

Towards Repeatable, Scalable Graphene Integrated Micro-Nano Electromechanical Systems (MEMS/NEMS)

et al. 2021

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The demand for graphene-based devices is rapidly growing but there are significant challenges for developing scalable and repeatable processes for the manufacturing of graphene devices. Basic research on understanding and controlling growth mechanisms have recently enabled various mass production approaches over the past decade. However, the integration of graphene with Micro-Nano Electromechanical Systems (MEMS/NEMS) has been especially challenging due to performance sensitivities of these systems to the production process. Therefore, ability to produce graphene-based devices on a large scale with high repeatability is still a major barrier to the commercialization of graphene. In this review article, we discuss the merits of integrating graphene into Micro-Nano Electromechanical Systems, current approaches for the mass production of graphene integrated devices, and propose solutions to overcome current manufacturing limits for the scalable and repeatable production of integrated graphene-based devices.

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“…The negative charge induces an electric field between the NVcenters and the graphene. Field effect transistor (FET) actions occur with carrier concentration in the graphene channel varying with the concentration of NVcenters near diamond surface [21], [22]. For n-type graphene, electron concentration decreases with concentration of NV-centers due to the charge state induced field effect on the graphene.…”

Section: Introductionmentioning

confidence: 99%

NV Center Charge State Controlled Graphene-on-Diamond Field Effect Transistor Actions With Multi-Wavelength Optical Inputs

Tzeng

Chen

et al. 2020

IEEE Open J. Nanotechnol.

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We demonstrate graphene-on-diamond field effect transistor (FET) actions modulated by optically excited charge state of nitrogen-vacancy (NV) centers in diamond. Palladium (Pd) metal contacts on graphene serve as the source and the drain. Negative charge state NVcenter in diamond serves as the gate with diamond being the gate dielectric and produces an electric field to enhance the hole concentration in the graphene channel. The conductivity of graphene varies with negative charge state NVcenter, resulting in differential conductance. The negative gate bias is removed when a NVcenter is converted to an NV o center. P-type graphene channel exhibits positive differential conductance under illumination by a blue (405 nm) laser beam while on the contrary negative differential conductance by a red (633 nm) laser beam. Furthermore, by simultaneous illumination of both blue and red laser beams, effects on differential conductance decrease according to the relative intensity of the two laser beams. Graphene FETs with wavelength dependent multiple optical inputs and one electrical output in response to the charge state of NV centers in diamond has been reported.

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Graphene-based positron charge sensor

Cited by 5 publications

References 15 publications

The SPOT-IL Positron Beam Construction and Its Use for Doppler Broadening Measurement of Titanium Thin Films

The SPOT-IL Positron Beam Construction and Its Use for Doppler Broadening Measurement of Titanium Thin Films

Towards Repeatable, Scalable Graphene Integrated Micro-Nano Electromechanical Systems (MEMS/NEMS)

NV Center Charge State Controlled Graphene-on-Diamond Field Effect Transistor Actions With Multi-Wavelength Optical Inputs

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