Graphene-based materials and their applications in electrolyte-gated transistors for sensing

Vasilijević, Sandra; Boukraa, Rassen; Battaglini, Nicolas; Piro, Benoı̂t

doi:10.1016/j.synthmet.2023.117355

Cited by 11 publications

(4 citation statements)

References 129 publications

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“…We start the model from literature, e.g., Refs. [20][21][22][23][24] that describes the capacitive coupling in the rGO-EGT, and we modify it by explicitly introducing the voltage drop at all relevant interfaces that exist in the rGO-EGT immunosensor. [25,26] These are depicted in Figure 2a.…”

Section: Voltage Profile Across the Rgo-egtmentioning

confidence: 99%

How Biorecognition Affects the Electronic Properties of Reduced Graphene Oxide in Electrolyte‐Gated Transistor Immunosensors

Sensi,

de Oliveira,

Berto

et al. 2024

Adv Funct Materials

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Ambipolar electrolyte‐gated transistors (EGTs) based on reduced graphene oxide (rGO) have been demonstrated as ultra‐sensitive and highly specific immunosensors. However, the physics and chemistry ruling the device operation are still not fully unraveled. In this work, the aim is to elucidate the nature of the observed sensitivity of the device. Toward this aim, a physical–chemical model that, coupled with the experimental characterization of the rGO‐EGT, allows one to quantitatively correlate the biorecognition events at the gate electrode and the electronic properties of rGO‐EGT is proposed. The equilibrium of biorecognition occurring at the gate electrode is shown to determine the apparent charge neutrality point (CNP) of the rGO channel. The multiparametric analysis of the experimental transfer characteristics of rGO‐EGT reveals that the recognition events modulate the CNP voltage, the excess carrier density Δn, and the quantum capacitance of rGO. This analysis also explains why hole and electron carrier mobilities, interfacial capacitance, the curvature of the transfer curve, and the transconductances are insensitive to the target concentration. The understanding of the mechanisms underlying the transistor transduction of the biorecognition events is key for the interpretation of the response of the rGO‐EGT immunosensors and to guide the design of novel and more sensitive devices.

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Section: Voltage Profile Across the Rgo-egtmentioning

confidence: 99%

How Biorecognition Affects the Electronic Properties of Reduced Graphene Oxide in Electrolyte‐Gated Transistor Immunosensors

Sensi,

de Oliveira,

Berto

et al. 2024

Adv Funct Materials

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“…When a negative V g is applied (Figure 4d-ii), cations move toward the gate/electrolyte interface while anions move toward the electrolyte/rGO channel interface (Figure S7a, Supporting Information), leading to the formation of two oppositely charged EDLs: i) the gate/ionogel interface corresponds to the capacitance C 1 , and ii) the ionogel/rGO interface corresponds to the capacitance C 2 (Figure S7b, Supporting Information). [45][46][47][48][49][50][51] The capacitance C EDL can be modeled as two plate capacitors in series and calculated using the equation: 1…”

Section: Fabrication and Characterization Of Synaptic Egfetmentioning

confidence: 99%

Bio‐Inspired Artificial Fast‐Adaptive and Slow‐Adaptive Mechanoreceptors With Synapse‐Like Functions

Huynh

Trung

Bag

et al. 2023

Adv Funct Materials

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Development of artificial mechanoreceptors capable of sensing and pre‐processing external mechanical stimuli is a crucial step toward constructing neuromorphic perception systems that can learn and store information. Here, bio‐inspired artificial fast‐adaptive (FA) and slow‐adaptive (SA) mechanoreceptors with synapse‐like functions are demonstrated for tactile perception. These mechanoreceptors integrate self‐powered piezoelectric pressure sensors with synaptic electrolyte‐gated field‐effect transistors (EGFETs) featuring a reduced graphene oxide channel. The FA pressure sensor is based on a piezoelectric poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)) thin film, while the SA pressure sensor is enabled by a piezoelectric ionogel with the piezoelectric‐ionic coupling effect based on P(VDF‐TrFE) and an ionic liquid. Changes in post‐synaptic current are achieved through the synaptic effect of the EGFET by regulating the amplitude, number, duration, and frequency of tactile stimuli (pre‐synaptic pulses). These devices have great potential to serve as artificial biological mechanoreceptors for future artificial neuromorphic perception systems.

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“…More attention is being paid by the semiconductor business to new materials and devices that could make devices work better or add new functions to them. A recent study by [1], [2] has shown that materials based on graphene are used in electrolyte-gated transistors and biomedical instruments. Geim tested graphene as one of the thinnest and strongest material (in the nm range) in the universe whose charge carrier exhibits giant intrinsic mobility [3].…”

Section: Introductionmentioning

confidence: 99%

Potentiality of graphene as a base material for impact ionization avalanche transit time diode in high-frequency applications

Swain,

Tripathy

2024

Bulletin EEI

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In this paper, the microwave application potential of graphene is studied using a double-drift-region (DDR) impact ionization avalanche transit time (IMPATT) diode. The simulation of this diode is carried out for the very first time at several different atmospheric window frequencies. Because graphene has unique and special properties, it could be used to make electronic gadgets for the next generation. The device is simulated at a variety of millimeter and sub-millimeter wave frequencies using a model called self-consistent drift diffusion (SCDD), which was developed by the author based on current continuity, Poisson’s equation and space charge equation. When compared to traditional IMPATT devices such as Si, GaAs, InP and GaP, the results demonstrate superior performance in terms of efficiency, and RF power across a wide range of operating conditions. Again, the behavior of noise in graphene IMPATT is studied, and it is found that it makes less noise than Si and GaAs IMPATT. The simulation results open up new avenues for IMPATT diode manufacture and design.

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Graphene-based materials and their applications in electrolyte-gated transistors for sensing

Cited by 11 publications

References 129 publications

How Biorecognition Affects the Electronic Properties of Reduced Graphene Oxide in Electrolyte‐Gated Transistor Immunosensors

How Biorecognition Affects the Electronic Properties of Reduced Graphene Oxide in Electrolyte‐Gated Transistor Immunosensors

Bio‐Inspired Artificial Fast‐Adaptive and Slow‐Adaptive Mechanoreceptors With Synapse‐Like Functions

Potentiality of graphene as a base material for impact ionization avalanche transit time diode in high-frequency applications

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