Graphene-based magnetoresistance device utilizing strip pattern geometry

Abstract

The idea of a raster pattern magnetoresistor made of thin films of III–V compounds and a metallic layer has been known for over fifty years. Based on this knowledge, we present the construction of a magnetoresistor made of combined graphene and metallic strip patterns. The presented device is implemented using a monolayer of graphene epitaxially grown on a semi-insulating substrate. A graphene strip pattern magnetoresistor gives a promising wide range of practical applications due to its very high sensitivity combined with the mono-atomic thickness of the sensitive layer, the simplicity of realization, and a very convenient principle of sensor operation assuming only the usage of two electrical terminals.

Extraordinary magnetoresistance in encapsulated monolayer graphene devices

“…The extraordinary magnetoresistance (EMR) effect discovered by Solin and coworkers led to widespread interest in this phenomenon for magnetic sensing applications [1][2][3][4] . In the original work 1 , an extremely large magnetoresistance was found with the normalized ratio M R = (R(B) − R 0 ) /R 0 as high as 16,000 5 at B = 5 T, in devices comprised of a four-terminal InSb disk with a central metal shunt. EMR is a geometric effect: at zero field, the shunt short circuits current through the middle of the device.…”

“…With device mobility linked to greater EMR 1,3 , here we investigate EMR devices fabricated from encapsulated graphene. have mobilities of µ ≈ 70, 000 cm 2 /Vs 1 ; graphene-onoxide devices are in the 1,000 to 10,000 cm 2 /Vs range but the mobilities of hBN-encapsulated devices can be 2 or 3 orders of magnitude larger [12][13][14][15][16]18,19 .…”

“…The advent of graphene device research in 2004 introduced a material with a readily tunable, bipolar conductivity, and was soon followed by a first generation of graphene EMR devices [11][12][13][14][15][16] . While an EMR effect was achieved, the M R ratios remained below 1000, well short of that in bulk semiconductors.…”

Role of plasma-induced defects in the generation of 1/f noise in graphene

“…Electrical excess noise is a parameter of interest for the characterization of electronic devices, including recently developed graphene-based sensors. [7][8][9][10] In particular, 1/f noise constitutes a fundamental limit to the resolution of resistive 11 and Hall effect sensors, 12,13 and the frequency up-conversion of 1/f noise affects amplitude and phase noise of radio-frequency amplifiers, oscillators and detectors. 11 Graphene sensors having electrical noise as output were also proposed.…”

Magnetic Field-Free Giant Magnetoresistance in a Proximity- and Gate-Induced Graphene Spin Valve

“…The proposed GMR offers not only a viable path to the tantalizing magnetic field-free spintronics, but also an evidence for the ferromagnetism. GMR based on graphene has been widely studied before [3,12,[20][21][22][23][24][25][26][27][28][29][30][31][32][33][34]; however, the value is usually small and a magnetic field is indispensable.…”