2020
DOI: 10.1016/j.snb.2020.128432
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Graphene based field-effect transistor biosensors functionalized using gas-phase synthesized gold nanoparticles

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Cited by 73 publications
(59 citation statements)
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“…Top-gated GFETs are widely found in publications related to RF applications [ 16 , 17 , 18 ], and are also very promising in the development of graphene-based liquid-gate transistors (SGFETs), with a wide range of applications in biosensors [ 19 ].…”
Section: Most Common Graphene Transistor Topologiesmentioning
confidence: 99%
See 1 more Smart Citation
“…Top-gated GFETs are widely found in publications related to RF applications [ 16 , 17 , 18 ], and are also very promising in the development of graphene-based liquid-gate transistors (SGFETs), with a wide range of applications in biosensors [ 19 ].…”
Section: Most Common Graphene Transistor Topologiesmentioning
confidence: 99%
“… Top-gated graphene transistors: ( a ) single-gate [ 16 ]; ( b ) two-fingers [ 18 ]; ( c ) topology of the two-fingers transistor; ( d ) top-liquid gate [ 19 ]; and ( e ) topology of the top-liquid gate. …”
Section: Figurementioning
confidence: 99%
“…Graphene nanosheets, a honeycomb structured carbon material, possess unique properties like high thermal stability, mechanical strength, and excellent electrical conductivity [1,2]. By virtue of its distinct characteristics, attention was drawn to represent graphene in the development of novel devices which can be used in various applications spanned from electronics to the medical field [3][4][5]. However, the zero-band gap nature of graphene restricts its application in optoelectronic devices effectively.…”
Section: Introductionmentioning
confidence: 99%
“…The pH sensors have widely attracted attention and been used for biological and chemical applications, such as biosensors [1][2][3], the medical community [4][5][6], and clinical measurements [7]. Since the first ion-sensitive field-effect transistor (ISFET) was fabricated by Bergveld in 1970 [8], several teams in the world have studied to improve the sensing performance of the ISFET [9][10][11].…”
Section: Introductionmentioning
confidence: 99%