“…When graphene is grown on SiC substrate, its carrier transport is significantly affected by a range of scattering mechanisms, predominantly, long-range Coulomb scattering on charged impurities trapped in the graphene-substrate interface. Others include short-range disorder related to intrinsic lattice imperfections, point defects and dislocations, 10,11,20,22,[24][25][26][27][31][32][33][34] "ripples" in graphene's atomic structure, 6,7,[35][36][37][38] and acoustic phonons. [39][40][41] It has been calculated that in case of monolayer graphene, the room temperature intrinsic mobility of charge carriers is phononlimited to $10 5 cm 2 /Vs (Refs.…”