Graphene as a diffusion barrier at the interface of Liquid–State low-melting Sn–58Bi alloy and copper foil

Shen, Yu-An; Chen, Haozhe; Chen, Sheng-Wen; Chiu, Shen; Guo, Xing-You; Hsieh, Ya‐Ping

doi:10.1016/j.apsusc.2021.152108

Cited by 20 publications

(8 citation statements)

References 50 publications

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“…As a result, various signal integrity (SI) and power integrity (PI) issues can arise. In particular, when the noise couples to vertical interconnects such as through glass vias (TGVs), the SI/PI can be degraded even more at solder joints and micro-bumps [17,18] underneath TGVs due to dimensional mismatches. Various types of noise sources that can cause power/ground noise in the glass interposer PDN are depicted in Figure 2.…”

Section: Figurementioning

confidence: 99%

Electrical Performance Analysis of High-Speed Interconnection and Power Delivery Network (PDN) in Low-Loss Glass Substrate-Based Interposers

Kim

2023

Micromachines

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In this article, electrical performance analysis of high-speed interconnection and power delivery network (PDN) in low-loss glass substrate-based interposers is conducted considering signal integrity (SI) and power integrity (PI). The low-loss glass substrate is a superior alternative to silicon substrate in terms of high-speed signaling and fabrication yield. However, the low-loss of the substrate is vulnerable to power/ground noise in the PDN since the low-loss property of the substrate cannot suppress the noise naturally. In this article, an in-depth electrical performance analysis is conducted based on various measurements and simulations to fully benefit the advantages of the low-loss glass substrate. First, the fabrication process and test vehicles for the analysis are explained. Using the test vehicles, the electrical performance of the glass interposer’s high-speed interconnection is compared with those of silicon and organic interposers. The insertion loss, eye-diagrams, and signal bandwidths of three interposer channels are compared and analyzed based on electromagnetic (EM) and circuit simulations. Also, the electrical performance of the through glass via (TGV) channel is measured and compared with through silicon via (TSV) channel. The high-speed interconnection of the glass interposer showed better performance for most of the parameters which is more suitable for maintaining the SI. Even though the low-loss of the glass substrate ensured the SI, power/ground noise issues in the PDN must be analyzed and solved. In this article, various cases inducing the power/ground noise in the PDN are considered, simulated, and measured. To solve the issues, ground TGV design and electromagnetic bandgap (EBG) design are proposed for an efficient broadband suppression of the noise generated in the glass interposer PDN.

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Section: Figurementioning

confidence: 99%

Electrical Performance Analysis of High-Speed Interconnection and Power Delivery Network (PDN) in Low-Loss Glass Substrate-Based Interposers

Kim

2023

Micromachines

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“…However, due to the non-negligible risks of lead to the human body and environment, lead is required to be removed from electronic products. Currently, many lead-free solders have been studied in various fields as alternatives to Sn-Pb solders, such as Sn-Ag-Cu [ 1 , 2 ], Sn-Bi [ 3 , 4 ], Sn-Zn [ 5 ], Sn-Cu [ 6 ], Sn-In [ 7 ], and so on. Among them, the Sn-Bi series has been extensively studied by researchers for its lower cost and good wettability [ 8 , 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

Effect of Graphene Nanosheets on the Microstructure and Mechanical Properties of Sn-20Bi Solder

Yang

Qin

Feng³

et al. 2023

Materials

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The application of Sn-Bi series solder is limited due to the brittleness of Bi phase. Sn-20Bi solder with less Bi element content has great research prospects, but it needs modification to make it a substitute for traditional Sn-Pb solder. In this article, we mixed graphene nanosheets with nanometer Sn powder by means of ultrasonic oscillation, and Sn-20Bi-qGNS (q = 0.01, 0.02, 0.04, 0.06, and 0.1 wt.%) solder alloys were prepared by the melt-casting method. The effects of graphene nanosheets (GNSs) on the microstructure, physical properties, mechanical properties, and corrosion resistance of solder alloys were investigated. Scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were used to determine the microstructural morphology and composition. The results showed that the melting point, density, and wettability of the solder decreased slightly with the addition of GNSs. The addition of GNSs as a second phase refined the solder structure and improved the tensile strength of the molten Sn-20Bi composite solder to 99.6 MPa, while elongation decreased with the addition of GNSs. Furthermore, GNSs prevented the MC Sn-20Bi-qGNSs/Cu intermetallic compound layers’ growth by interfering with atomic diffusion and grain boundary movement. In addition, the addition of 0.02 wt.% GNSs enhanced the shear strength of MC Sn-20Bi solder joints to 46.3 MPa. The electrochemical experimental results show that the surface corrosion products of MC Sn-20Bi-qGNSs under 3.5% NaCl solution were Sn3O(OH)2Cl2, with MC Sn-20Bi-0.01GNSs exhibiting the best corrosion resistance.

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“…Moreover, it is a widely-used conductor material for advanced electronic devices owing to its high thermal conductivity, ductility, and strength [3,4]. Electroplating Cu is common in electronic devices for the industrial mass production of conductive traces, wires, and metallizations because of its high deposition rate [5][6][7]. Most electroplating solutions for these devices are based on sulfuric acid and copper sulfate [7][8][9], with organic additives such as chloride ion (Cl − ) as a promoter, polyethylene glycol (PEG) as a suppressor, and bis-(3-sulfopropyl) disulfide (SPS) as an accelerator [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Void-free interface between in and high-impurity Cu joint

Lee,

Shen,

Chen

2023

Science and Technology of Welding and Joining

Self Cite

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The effect of impurities in the Cu film on the void formation at the interface of the Sn-rich solder joint has been extensively studied. However, this has rarely been studied for In solder joints. In this study, Sn-3.0Ag-0.5Cu (SAC305) and In-solder/ Cu films with high impurities were aged at 150 °C to analyze the films at various aging times. A metastable CuIn 2 phase appeared and transformed into a stable Cu 11 In 9 phase. Noticeable voids and cracks were observed at the SAC305/Cu interface during the solid-state aging. In contrast, there was a void-free interface between In and Cu-CP. This was primarily due to the difference in diffusion behaviour between In/Cu and SAC305/Cu. The mechanism of the above phenomenon was revealed.

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Graphene as a diffusion barrier at the interface of Liquid–State low-melting Sn–58Bi alloy and copper foil

Cited by 20 publications

References 50 publications

Electrical Performance Analysis of High-Speed Interconnection and Power Delivery Network (PDN) in Low-Loss Glass Substrate-Based Interposers

Electrical Performance Analysis of High-Speed Interconnection and Power Delivery Network (PDN) in Low-Loss Glass Substrate-Based Interposers

Effect of Graphene Nanosheets on the Microstructure and Mechanical Properties of Sn-20Bi Solder

Void-free interface between in and high-impurity Cu joint

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