Graphene and its Applications. Study on The Development Trends in Research and on the Implementation Potential using Big Data and Information Refining Methods

Żołnierski, Aleksander; Cetera, Wieslaw; Jaruga, Dariusz; Grzegorek, Jan; Sowula, Grzegorz

doi:10.26502/jnr.2688-85210034

Cited by 3 publications

(1 citation statement)

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“…The specific properties of graphene channel (GCs) [1][2][3] and black-P (b-P), black-As (b-As) , or black-AsP (b-AsP) layers [4][5][6][7][8] open up prospects for devices based on the GCs (see, for example, the review [9]) and on the GC/b-AsP heterostructures [6], including the electron devices using the real-space transfer over the b-AsP layers [10,11] and different optoelectronic devices [12][13][14][15]. Due to relatively low energy barriers for the electrons and holes at the GC/b-AsP interface, the thermionic emission through such an interface can be effective, particularly, enabling the creation of the GC/b-AsP-bolometric terahertz (THz) detectors.…”

Section: Introductionmentioning

confidence: 99%

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

Ryzhii¹,

Tang²,

Otsuji³

et al. 2023

Preprint

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We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel GC and a floating metal gate (MG) separated from the GC by a blackphosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by impinging THz radiation leading to thermionic emission of the hot electrons from the GC to the MG. This results in the variation of the floating gate potential, which affects the source-drain current. At the THz radiation frequencies close to the plasmonic resonance frequencies in the gated GC, the variation of the source-drain current and, hence, the detector responsivity can be resonantly large.

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Section: Introductionmentioning

confidence: 99%

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

Ryzhii¹,

Tang²,

Otsuji³

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

Facile synthesis of reduced graphene oxide using Caesalpinia sappan L. extract as green reducing agent

Destiarti,

Riyanto,

Roto

et al. 2024

Next Materials

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Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

Ryzhii

Tang

Otsuji

et al. 2023

Journal of Applied Physics

View full text Add to dashboard Cite

We evaluate the terahertz (THz) detectors based on field-effect transistor (FET) with the graphene channel (GC) and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer. The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by impinging THz radiation leading to thermionic emission of the hot electrons from the GC to the MG. This results in the variation of the floating gate potential, which affects the source–drain current. At the THz radiation frequencies close to the plasmonic resonance frequencies in the gated GC, the variation of the source–drain current and, hence, the detector responsivity can be resonantly large.

show abstract

Graphene and its Applications. Study on The Development Trends in Research and on the Implementation Potential using Big Data and Information Refining Methods

Cited by 3 publications

References 0 publications

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

Facile synthesis of reduced graphene oxide using Caesalpinia sappan L. extract as green reducing agent

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

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