Graphene and Boron Nitride Single Layers

Greber, Thomas

doi:10.48550/arxiv.0904.1520

Cited by 3 publications

(4 citation statements)

References 75 publications

(139 reference statements)

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“…The lattice constant of the atomic structure is 0.24 ± 0.04 nm. Taking this into account, the determined values are in good agreement with those determined in other experimental studies or theoretical calculations, which are 3-3.2 nm for the superstructure and 0.25-0.27 pm for the atomic periodicity [1,7,8,16,15,36,11,37]. Figure 4(a) shows the topography measured by nc-AFM in an area of 50 × 50 nm 2 with bottom-up as the slow scan direction.…”

Section: Resultssupporting

confidence: 86%

Contrast inversion of the h-BN nanomesh investigated by nc-AFM and Kelvin probe force microscopy

Koch

Langer

Kawai

et al. 2012

J. Phys.: Condens. Matter

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Single sheets of hexagonal boron nitride (h-BN) on transition metals provide a model system for layered insulating materials as well as a functional substrate for molecules and metal clusters. The progress in the understanding of h-BN layers on transition metals was mainly driven by scanning tunnelling microscopy (STM) and photoelectron spectroscopy (PES) measurements within the last decade, while direct measurements of mechanical and electrical properties are still rare. Our investigations of the two-dimensional (2D) h-BN nanomesh on a Rh(111) substrate by high-resolution noncontact atomic force microscopy (nc-AFM) reveal a complex surface structure including a frequently observed contrast inversion. Detailed 2D force spectroscopy measurements are revealing towards a mechanical elastic deformation of the h-BN monolayer caused by the tip-sample interaction. Furthermore, Kelvin probe force microscopy (KPFM) and spectroscopy measurements show local work function variations of the nanomesh, proving the results obtained by PES but additionally providing detailed local information.

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Section: Resultssupporting

confidence: 86%

Contrast inversion of the h-BN nanomesh investigated by nc-AFM and Kelvin probe force microscopy

Koch

Langer

Kawai

et al. 2012

J. Phys.: Condens. Matter

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“…23 Monolayer graphite (MG) or graphene (the MG nomenclature has been used by the surface science community since the 1970s) has been grown on many substrates. 24 However, most applications require that graphene to be on an insulator and this requires that if graphene is grown on a metal it must be transferred to another appropriate substrate or processed in some other way. of Ir is extremely difficult since it is one of its fundamental properties.…”

mentioning

confidence: 99%

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes

et al. 2009

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Graphene, a two-dimensional monolayer of sp(2)-bonded carbon atoms, has been attracting great interest due to its unique transport properties. One of the promising applications of graphene is as a transparent conductive electrode owing to its high optical transmittance and conductivity. In this paper, we report on an improved transfer process of large-area graphene grown on Cu foils by chemical vapor deposition. The transferred graphene films have high electrical conductivity and high optical transmittance that make them suitable for transparent conductive electrode applications. The improved transfer processes will also be of great value for the fabrication of electronic devices such as field effect transistor and bilayer pseudospin field effect transistor devices.

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“…Graphene, a monolayer of sp 2 -bonded carbon atoms or one monolayer of graphite, has attracted interest in part because of its unique transport properties. 1 The surface science community has published extensively on what is referred to as "monolayer graphite", that is, graphene, as grown on various metal films that are epitaxially well matched to graphene.…”

mentioning

confidence: 99%

“…1 The surface science community has published extensively on what is referred to as "monolayer graphite", that is, graphene, as grown on various metal films that are epitaxially well matched to graphene. 2 To date, devices have been fabricated mostly on exfoliated graphene, 1 chemically reduced graphite oxide, [3][4][5][6] graphene formed by ultrahigh vacuum (UHV) annealing of single crystal SiC, 7,8 and that grown on metal substrates. [9][10][11][12][13][14][15] However, exfoliated graphene still shows superior transport properties compared to all other sources.…”

mentioning

confidence: 99%

Evolution of Graphene Growth on Ni and Cu by Carbon Isotope Labeling

et al. 2009

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Graphene, a monolayer of sp 2 -bonded carbon atoms or one monolayer of graphite, has attracted interest in part because of its unique transport properties 1 . The surface science community has an extensive literature on what was referred to as "monolayer graphite", i.e., graphene, as grown on various metal films that are epitaxially well matched to graphene 6 . Recent attempts to obtain graphene, including on insulating substrates for device measurements, have been by chemical reduction of

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Graphene and Boron Nitride Single Layers

Cited by 3 publications

References 75 publications

Contrast inversion of the h-BN nanomesh investigated by nc-AFM and Kelvin probe force microscopy

Contrast inversion of the h-BN nanomesh investigated by nc-AFM and Kelvin probe force microscopy

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes

Evolution of Graphene Growth on Ni and Cu by Carbon Isotope Labeling

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