Grain-size-related transient terahertz mobility of femtosecond-laser-annealed polycrystalline silicon

Charge Carriers in Planar and Meso-Structured Organic–Inorganic Perovskites: Mobilities, Lifetimes, and Concentrations of Trap States

“…The fact that the photo-conductance is almost an order of magnitude lower in the meso-structured OMHPs compared to the planar films is most likely related to the small size of the crystal domains, which reduces the effective mobilities observed at microwave frequencies. [42][43][44] At intensities below 10 11 photons/cm 2 , we can observe that the lifetimes of mobile carriers are substantially longer in CH 3 NH 3 PbI 3-x Cl x than in CH 3 NH 3 PbI 3 and both meso-structured films. The extended charge carrier lifetimes in CH 3 NH 3 PbI 3-x Cl x are particularly relevant at light intensities below 10 10 photons/cm 2 , since these conditions are representative for illumination by solar radiation.…”

“…In contrast, for the meso-structured films, the effective mobilities are less than 6 cm 2 /(V s). The fact that the photoconductance is almost an order of magnitude lower in the meso-structured OMHPs compared to the planar films is most likely related to the small size of the crystal domains, which reduces the effective mobilities observed at microwave frequencies. − …”

Ultrafast Electrical Measurements of Isolated Silicon Nanowires and Nanocrystals

“…In past studies, mobility values of carriers within the Si nanostructures were found to decrease as the size of the c-Si domain decreases. 37 One cause of a reduced mobility can be linked to the carrier mean free path (l f ), which is the average distance a charge carrier travels prior to undergoing a scattering event. For bulk c-Si, l f is on the order of 40 nm.…”

“…The extracted mobilities for the Si NWs are similar to the measured bulk c-Si values over equivalent carrier densities. In past studies, mobility values of carriers within the Si nanostructures were found to decrease as the size of the c-Si domain decreases . One cause of a reduced mobility can be linked to the carrier mean free path ( l f ), which is the average distance a charge carrier travels prior to undergoing a scattering event.…”

Influence of Polysilicon Deposition Conditions on Advanced 3D NAND

“…[6][7][8][9][10] In order to enhance the I on , the number of grain boundaries and interfacial or inner defects must be reduced by enlarging the grain size and/or improve the interface between poly-Si and oxide. 5,7,[11][12][13][14][15][16] Recently, it is demonstrated in many experiments that the number of grain boundaries can be reduced by high temperature anneal such as Rapid Thermal Anneal (RTP) or Laser Anneal (LA). What's more, the interfacial or inner defects can be also decreased using high pressure or D 2 /H 2 annealing.…”