2017
DOI: 10.1016/j.ceramint.2016.12.151
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Grain size effect in conductive phosphate / carbon nanotube ceramics

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Cited by 6 publications
(4 citation statements)
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“…The temperature dependence of DC conductivity is presented in Figure 6 . Three different regions can be separated: (1) in 300–500 K temperature range the electrical conductivity increased with temperature due to the thermal activation mechanism [ 29 ], (2) below room temperature the electrical conductivity increased on cooling due to rapid shrinkage of ceramics, (3) and at very low temperatures (below 200 K) for ceramics with 50 wt.% Ag nanoparticles of 30–50 nm the electrical conductivity decreased on cooling due to the electron tunneling effects [ 30 ]. Above room temperature, the temperature dependence of DC conductivity fitted with the Arrhenius law: where σ 0 is the pre-exponential factor, k is the Boltzmann constant and E is the activation energy.…”
Section: Resultsmentioning
confidence: 99%
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“…The temperature dependence of DC conductivity is presented in Figure 6 . Three different regions can be separated: (1) in 300–500 K temperature range the electrical conductivity increased with temperature due to the thermal activation mechanism [ 29 ], (2) below room temperature the electrical conductivity increased on cooling due to rapid shrinkage of ceramics, (3) and at very low temperatures (below 200 K) for ceramics with 50 wt.% Ag nanoparticles of 30–50 nm the electrical conductivity decreased on cooling due to the electron tunneling effects [ 30 ]. Above room temperature, the temperature dependence of DC conductivity fitted with the Arrhenius law: where σ 0 is the pre-exponential factor, k is the Boltzmann constant and E is the activation energy.…”
Section: Resultsmentioning
confidence: 99%
“…The activation energy value was about several tenths of meV and it was almost independent of filler concentration. This is typical for thermally activated electrical conductivity [ 29 ].…”
Section: Resultsmentioning
confidence: 99%
“…MWCNT were synthesized via the chemical vapor deposition (CVD) method. Aligned MWCNT arrays were grown on silicon substrates as a result of the thermal decomposition of toluene at a temperature of 800 • C. The preparation method details can be found in [32], for example, and scanning and tunnelling electron microscopy of the nanotubes used have been presented in our previous works [27,33].…”
Section: Methodsmentioning
confidence: 99%
“…To understand the underlying physics the following idea may be proposed. It has been proven, that the conductivity of the MWCNT/ceramic composites has the tunnelling mechanism [33]. The tunnelling resistivity between two equivalent nanotubes can be calculated using the equation [37]:…”
Section: Radio Frequency Rangementioning
confidence: 99%