Grain Growth Effect of Cr$_{2}$O$_{3}$ Thin Film Layer on Exchange Coupling of Cr$_{2}$O$_{3}$/Co Interface

Nozaki, Tomohiro; Ashida, T.; Sato, Yuji; Sahashi, M.

doi:10.1109/tmag.2012.2195718

Cited by 9 publications

(11 citation statements)

References 8 publications

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“…Hereafter, we describe the Co-Pt alloy as Co 90 Pt 10 . Figure 1(b) shows in-plane XRD / scan profiles from Co 90 Pt 10 (100) confirmed from in-plane and out-of-plane XRD measurements were as follows: Al 2 O 3 (0001) [10-10] substrate||Cr 2 O 3 (0001) ||hcp-Co 90 Pt 10 (0001) [11][12][13][14][15][16][17][18][19][20]. The experimental values of the lattice parameters are listed in Table I.…”

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confidence: 99%

Temperature-dependent perpendicular magnetic anisotropy of Co-Pt on Cr2O3 antiferromagnetic oxide

Nozaki

Oida

Ashida

et al. 2013

Applied Physics Letters

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We clarify the origin of the interface perpendicular magnetic anisotropy (PMA) at the Cr2O3/ferromagnet interface by investigating the temperature dependence of the magnetic properties of Cr2O3/Co-Pt. We observed positive large interface PMA both above and below the blocking temperature of Cr2O3, with the PMA being less sensitive to temperature. Our results indicate that the effect of the metal/oxide interface, as well as that of the MgO/CoFeB interface, contributes strongly to the PMA at the Cr2O3/Co-Pt interface, although the effect of perpendicular exchange coupling might also slightly contribute to the interface PMA.

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confidence: 99%

Temperature-dependent perpendicular magnetic anisotropy of Co-Pt on Cr2O3 antiferromagnetic oxide

Nozaki

Oida

Ashida

et al. 2013

Applied Physics Letters

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“…The Co/Pt subsystem is well known for its strong perpendicular magnetic anisotropy and efficient field- [3,15,16] and currentdriven [20][21][22][23]25] DW dynamics. Cr 2 O 3 is an insulating AFM that has been widely used to induce OOP exchange bias in Co/Pt and Co/Pd multilayers [56][57][58][59][60] as well as IP exchange bias in permalloy and CoPt thin films [61][62][63]. Additionally, our study shows that Cr 2 O 3 /Co/Pt can be exchange biased by either OOP or IP depending on the field-cooling direction.…”

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confidence: 59%

Control of field- and current-driven magnetic domain wall motion by exchange bias in Cr2O3/Co/Pt trilayers

et al. 2022

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We investigate the motion of magnetic domain walls driven by magnetic fields and current-driven spin-orbit torques in an exchange-biased system with perpendicular magnetization. We consider Cr 2 O 3 /Co/Pt trilayers as a model system, in which the magnetization of the Co layer can be exchanged biased out-of-plane or inplane depending on the field-cooling direction. In field-driven experiments, the in-plane exchange bias favors the propagation of the domain walls with internal magnetization parallel to the exchange-bias field. In current-driven experiments, the domain walls propagate along the current direction, but the domain wall velocity increases and decreases symmetrically (antisymmetrically) for both current polarities when the exchange bias is parallel (perpendicular) to the current line. At zero external field, the exchange bias modifies the velocity of currentdriven domain wall motion by a factor of 10. We also find that the exchange bias remains stable under external fields up to 15 kOe and nanosecond-long current pulses with current density up to 3.5 × 10 12 A/m. Our results demonstrate versatile control of the domain wall motion by exchange bias, which is relevant to achieve fieldfree switching of the magnetization in perpendicular systems and current-driven manipulation of domain walls velocity in spintronic devices.

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“…1-3 MERAM attracts much attention as a low power consumption spintronic device utilizing the electrical field manipulation of magnetization. A perpendicular exchange bias was observed for Cr 2 O 3 /Co bilayer system, 4,5 and an electrical field assisted magnetization switching was achieved using magnetoelectric effect in Cr 2 O 3 layer, 6,7 recently. These reports brought a great progress for the development of MERAM; however, the perpendicular exchange bias in Cr 2 O 3 /Co bilayer disappears below room temperature, because the N eel temperature of Cr 2 O 3 is as low as 308 K. 8 B-doping was proposed as a principle to improve the thermal stability through the N eel temperature enhancement.…”

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Effect of lattice deformation on exchange coupling constants in Cr2O3

Kota

Imamura

Sasaki

2014

Journal of Applied Physics

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Grain Growth Effect of Cr$_{2}$O$_{3}$ Thin Film Layer on Exchange Coupling of Cr$_{2}$O$_{3}$/Co Interface

Cited by 9 publications

References 8 publications

Temperature-dependent perpendicular magnetic anisotropy of Co-Pt on Cr2O3 antiferromagnetic oxide

Temperature-dependent perpendicular magnetic anisotropy of Co-Pt on Cr2O3 antiferromagnetic oxide

Control of field- and current-driven magnetic domain wall motion by exchange bias in Cr2O3/Co/Pt trilayers

Effect of lattice deformation on exchange coupling constants in Cr2O3

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