2010
DOI: 10.1016/j.vacuum.2010.06.011
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Grain growth and structural transformation in ZnS nanocrystalline thin films

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Cited by 34 publications
(14 citation statements)
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“…The values of n for direct allowed and direct forbidden transitions will be ½ and 3/2 respectively. For the indirect allowed and indirect forbidden transitions n can take values 2 and 3 respectively [32,42,43]. The band gap is determined for all the films from the plot of ( ) n 1 α versus photon energy ν h on the xaxis by extrapolating the linear portion of the graph to the 0 = ν h .…”
Section: Optical Analysismentioning
confidence: 99%
“…The values of n for direct allowed and direct forbidden transitions will be ½ and 3/2 respectively. For the indirect allowed and indirect forbidden transitions n can take values 2 and 3 respectively [32,42,43]. The band gap is determined for all the films from the plot of ( ) n 1 α versus photon energy ν h on the xaxis by extrapolating the linear portion of the graph to the 0 = ν h .…”
Section: Optical Analysismentioning
confidence: 99%
“…It was reported by several authors that the peak positions for the wurtzite or sphalerite phases of ZnS thin films shifted from the typical positions. This difference may be proceeding from the lattice expansion or distortion due to the new phases of impurities or intrinsic defects such as vacancies and interstitials [34][35][36][37][38][39]. It was shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…This reveals that the temperature required for the formation of the hexagonal ZnS phase is reduced by using ZnS nanopowders. 31,32 Therefore, it can be suggested that ZnS ceramics were partially melted at 980°C because ZnS nanopowders were directly used for the synthesis of ZnS ceramics.…”
Section: Resultsmentioning
confidence: 99%