2017
DOI: 10.1016/j.nanoen.2016.12.011
|View full text |Cite
|
Sign up to set email alerts
|

Grain engineering: How nanoscale inhomogeneities can control charge collection in solar cells

Abstract: Statistical and correlative analysis are increasingly important in the design and study of new materials, from semiconductors to metals. Non-destructive measurement techniques, with high spatial resolution, capable of correlating composition and/or structure with device properties, are few and far between. For the case of polycrystalline and inhomogeneous materials, the added challenge is that nanoscale resolution is in general not compatible with the large sampling areas necessary to have a statistical repres… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

2
42
0

Year Published

2018
2018
2022
2022

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 40 publications
(44 citation statements)
references
References 34 publications
(31 reference statements)
2
42
0
Order By: Relevance
“…The APT analyses show Na and In but no Ga enrichment at the planar defects observed in the film. Grain boundaries of polycrystalline films tend to show In 50 or Ga 57 enrichment, along with substantial amounts of Na.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…The APT analyses show Na and In but no Ga enrichment at the planar defects observed in the film. Grain boundaries of polycrystalline films tend to show In 50 or Ga 57 enrichment, along with substantial amounts of Na.…”
Section: Discussionmentioning
confidence: 99%
“…refs. 50 and 57 , respectively), on the other hand, could suggest a different solubility of In and Ga supercomplexes in CIGS that may depend on CGI ratio. If either of the two supercomplexes segregates preferentially at the grain boundaries, it could hinder In/Ga interdiffusion across the boundary due to Zener pinning.…”
Section: Discussionmentioning
confidence: 99%
“…(ii) Less frequent Ga enrichment of grain boundaries, i.e. their detrimental nature for device efficiency; 43,86 (iii) Na-induced hindered grain growth. 26,41,43 A second hypothesis relates to the asymmetry between In and Ga diffusivity, as already suggested by Witte et al in Na-free CIGS.…”
Section: Two Hypothesesmentioning
confidence: 99%
“…Furthermore, the premise offers a convenient explanation for the detrimental nature of the grain boundaries in Ga-rich CIGS, compared to conventional CIGS. 43,86 As vacancy antisite complexes are stable, by lowering the In migration barrier, Na allows the In excess to migrate to its equilibrium location (the grain boundaries). This has long been regarded as a benecial passivating effect, due to band gap widening at grain boundaries and consequent reduction of charge carrier recombination.…”
Section: Two Hypothesesmentioning
confidence: 99%
“…The most important feature of this technique is the possibility for in situ or operando studies. The impact of these defects and features can be quantified with measurements of x-ray beam induced current or voltage (XBIC/XBIV [50][51][52]), which is the natural extension of this study. The missing requirements for such studies are the ability to electrically contact the prepared samples and a different scheme for the ptychographic scan.…”
Section: E Outlookmentioning
confidence: 99%