2003
DOI: 10.1016/s0254-0584(02)00602-8
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Grain clusters and the geometrical origin of stress in CVD polycrystalline diamond

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Cited by 10 publications
(4 citation statements)
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“…Hence, one nitrogen atom (in the form of CN) can dramatically increase the rate of carbon atom growth by enhancing the nucleation of next layer growth on {111} surfaces! Other consequences are the increased twinning and defect generation, which are supported by experimental observation (Steeds et al 1998(Steeds et al , 2003Hunt 1999). The lifetime of CN adsorbates on the surface will be limited by thermal desorption and hydrogenation reactions, forming CH x N y (xZ1, 2; yZ1, 2) adsorbates, which are then subject to beta-scission reactions.…”
Section: The Modelmentioning
confidence: 74%
“…Hence, one nitrogen atom (in the form of CN) can dramatically increase the rate of carbon atom growth by enhancing the nucleation of next layer growth on {111} surfaces! Other consequences are the increased twinning and defect generation, which are supported by experimental observation (Steeds et al 1998(Steeds et al , 2003Hunt 1999). The lifetime of CN adsorbates on the surface will be limited by thermal desorption and hydrogenation reactions, forming CH x N y (xZ1, 2; yZ1, 2) adsorbates, which are then subject to beta-scission reactions.…”
Section: The Modelmentioning
confidence: 74%
“…Consequently the observed splitting for the Raman diamond line of sample B may be interpreted from a strict mechanical point of view, including the boundary and the stacking faults effects. When the rapid growth by formation of a <110> fibre axis symmetrically generates in-plane internal stresses [50], particularly along the <100> and <111> directions, the difference of stress sign (compressive for  s and tensile for  d ) for <110> oriented diamond crystals is attributed to either the grain boundary structure of <110> oriented films or a non uniform distribution of defects inside the crystals [51]. This behaviour is associated to a highly heterogeneous strain field arising from the most dominant planar structural defects such as twins and stacking faults [44].…”
Section: Discussionmentioning
confidence: 99%
“…For instance, inhomogeneous distributions of defects and impurities between different growth sectors are possible, but for high quality diamond films it is unlikely. Transmission electron microscopy of diamond films [16][17][18] also result in conclusion that high anisotropic stress is caused by the deformations of diamond lattice during the grain coalescence and twinning.…”
Section: Raman Shift CM -1mentioning
confidence: 93%