Grain boundary self-diffusion in evaporated Au films at low temperatures

Gupta, D.; Asai, K.

doi:10.1016/0040-6090(74)90285-5

Cited by 50 publications

(11 citation statements)

References 20 publications

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“…104) 105 and can reach values of up to 32% in nanocrystalline Ni. 106 The corresponding normalised activation enthalpies for grain-boundary self-diffusion are 8.68, 107 8.46, 108 and 8.21 109 for Au, Fe, and Al, respectively, 110 in which (descending) sequence of normalised grain-boundary diffusion activation enthalpies indeed parallels the (ascending) sequence of excess free volume data given above.…”

Section: B Activation Enthalpysupporting

confidence: 53%

Interdiffusion in amorphous AlxZr1-x alloys

Noah

Wang

Mittemeijer

2017

Journal of Applied Physics

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Interdiffusion in amorphous AlxZr1−x compositionally modulated multilayers was investigated by Auger electron spectroscopy sputter-depth profiling. Microstructural characterisation was performed by X-ray diffraction and cross-sectional transmission electron microscopy. The temperature-dependent chemical diffusion coefficient could be deduced at a series of temperatures in the range of 356 °C to 415 °C and was found to be weakly dependent on composition. The activation enthalpy for the chemical diffusion coefficients is slightly smaller at the composition of the Al-rich am-Al0.62Zr0.38 sublayer (1.6 eV) than at the composition of the Zr-rich am-Al0.27Zr0.73 sublayer (1.8 eV), which is not related to the concentration dependence of the excess free volume but to the smaller atomic size and mass of Al as compared to Zr. The smaller activation enthalpy for interdiffusion in partially crystallised specimens than in entirely amorphous AlxZr1−x multilayers is ascribed to the relatively large excess free volume in the grain boundaries of the nanocrystalline sublayers, as compared to the amorphous phase, at large Al concentrations. On the basis of an evaluation of the role of diffusion-induced stress in amorphous systems, it is shown that stresses induced by interdiffusion relax relatively fast by viscous flow and do not affect the determined diffusion coefficients.

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Section: B Activation Enthalpysupporting

confidence: 53%

Interdiffusion in amorphous AlxZr1-x alloys

Noah

Wang

Mittemeijer

2017

Journal of Applied Physics

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“…In metals, however, it would appear that this latter suggestion is unfounded since Au self-diffusion in evaporated Au thin films has the same Arrhenius behaviour as self -diffusion in melt cast polycrystalline Au [32].…”

Section: Influence Of Boundary Typementioning

confidence: 86%

Grain Boundary Diffusion in Ceramics

Atkinson

Monty²

1989

Surfaces and Interfaces of Ceramic Materials

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ABSTRACT. Diffusion at a grain boundary occurs at a different rate from that in the bulk crystalline lattice. Usually bulk lattice diffusion is relatively slow and boundary diffusion is much more rapid so that the boundary acts as an easy (or short circuit) path for transport in parallel with bulk diffusion.The experimental approaches to direct measurement of tracer diffusion along grain boundaries are well-established and, in principle, can give the grain boundary diffusion coefficient and the grain boundary width (or, in the case of an impurity atom, the product of boundary width and the segregation coefficient).Published data cover a range of materials in doped and undoped forms, and specimen types (single crystals, bicrystals, sintered powders and thin films), with host atoms or impurities as the diffusing species. In addition, atomistic simulations have been carried out using static lattice methods to help interpret the experimental observations. There is much disagreement in the detailed results in this field, but certain general conclusions are emerging.

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“…1.15, the 195 Au profiles in polycrystalline Au films grown on fused quartz substrates [63] exhibit extremely fast diffusion at much lower temperatures and shorter annealing times compared to the single-crystalline bulk or epitaxial films of Au. 1.15, the 195 Au profiles in polycrystalline Au films grown on fused quartz substrates [63] exhibit extremely fast diffusion at much lower temperatures and shorter annealing times compared to the single-crystalline bulk or epitaxial films of Au.…”

Section: Self-diffusion In Polycrystalline Au Filmsmentioning

confidence: 98%

“…Nakajima and Zumkley [98] have studied diffusion of 68 Ge, 63 Ni, 60 Co, 51 Cr, and 54 Mn in I-Al 70 Pd 21 Mn 9 single quasicrystals. Diffusion of 65 Zn, 114m In, 59 Fe, and 54 Mn in I-Al 70 Pd 21 Mn 9 , D-Al 72.6 Ni 10.5 Co 16.9 , and I-ZnMgHo quasicrystals has been reviewed recently.…”

Section: Diffusion In Quasicrystalline Alloysmentioning

confidence: 99%

Diffusion in Bulk Solids and Thin Films

Gupta

2005

Diffusion Processes in Advanced Technological Materials

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Grain boundary self-diffusion in evaporated Au films at low temperatures

Cited by 50 publications

References 20 publications

Interdiffusion in amorphous AlxZr1-x alloys

Interdiffusion in amorphous AlxZr1-x alloys

Grain Boundary Diffusion in Ceramics

Diffusion in Bulk Solids and Thin Films

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