Grain boundary scattering in CuInSe2 films

Abstract

Electrical conductivity and Hall mobility of CuInSez films were measured in the temperature range of 77-400 K. The films were deposited with different Cu/In ratios ranging from 0.7-0.9 and at substrate temperatures of 620-720 K. Effects of grain boundary scattering on the electron transport properties were studied carefully and it was observed that scattering at the grain boundaries is a predominant factor controlling the electron transport properties at lower temperatures while complex scattering mechanisms become operative at higher temperatures. The energy values of trap levels and the densities of trap states were also obtained.

Dense CIGS films obtained by blending submicron‐sized particles with nanoparticle suspensions using a non‐vacuum process

“…The electrical properties strongly depend on the densification and grain size. The carrier scattering at the pores or grain boundaries is a predominant factor in controlling the electrical properties of CIGS . The CIGS density increased with increasing submicron‐sized particle addition, leading to the reduction of carrier scattering from the pores and hence increasing the Hall mobility.…”

Two-step sintering of nanocrystalline Cu(In0.7Ga0.3)Se2

“…The most important sources of scattering in typical semiconductor materials include (a) boundary scattering from pores or grain boundaries, (b) activation barrier at grain boundaries, (c) local strain field, or (d) ionized impurity scattering [19]. Sanyal et al [20] investigated the electrical conductivity and Hall mobility measurements on CIS films and observed that scattering at the grain boundaries is a predominant factor in controlling the electron transport properties at low temperatures. The density and grain size of CIGS increased with increasing soaking time at 550 1C, which led to the reduction of carrier scattering from the grain boundaries and pores and hence increasing the Hall mobility.…”

Gas‐pressure assisted sintering of copper indium gallium selenide thin films

“…The most important sources of scattering in typical semiconductor materials include (a) boundary scattering from pores or grain boundaries, (b) activation barrier at grain boundaries, (c) local strain field, or (d) ionized impurity scattering . Sanyal et al investigated the electrical conductivity and Hall mobility measurements on CIS films and observed that scattering at the pores or grain boundaries is a predominant factor in controlling the electron transport properties at low temperatures. The pre‐sintered and selenized film exhibited higher density and larger grain size, which led to carrier scattering reduction from the pores and grain boundaries and hence increased the Hall mobility.…”