Grain boundary mediated leakage current in polycrystalline HfO2 films

McKenna, Keith P.; Shluger, Alexander L.; Iglesias, V.; Porti, M.; Nafrı́a, Montserrat; Lanza, Mario; Bersuker, G.

doi:10.1016/j.mee.2011.03.024

Cited by 115 publications

(80 citation statements)

References 20 publications

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“…3.17b). The latter is opposite to the trends reported elsewhere where a higher leakage current is seen in the GBs which was assigned to the thinner oxide and also to the higher density of defect generally present on GBs [47]. It is known that grain boundaries may possess different conductivity associated to the higher concentration of defects, vacancies and other contributor to tunneling and trap assisted leakages.…”

Section: Peak Force Tuna Case Studiescontrasting

confidence: 78%

Nanoscaled Electrical Characterization

Celano

2016

Metrology and Physical Mechanisms in New Generation Ionic Devices

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Section: Peak Force Tuna Case Studiescontrasting

confidence: 78%

Nanoscaled Electrical Characterization

Celano

2016

Metrology and Physical Mechanisms in New Generation Ionic Devices

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“…[51][52][53][54] Even considering the effect of hole trapping which can reduce the activation energy to oxygen vacancy generation, these results suggest that diffusion of pre-existing oxygen vacancies is always much more facile than defect generation in bulk TiO 2 . However, activation energies near the electrode interface [70][71][72] or at grain boundaries 12,73,74 may be considerably lower. Of the defect generation processes considered, Ti Frenkel formation appears as the most favorable.…”

Section: Discussionmentioning

confidence: 99%

Relevance of non-equilibrium defect generation processes to resistive switching in TiO2

Abdelouahed

McKenna

2015

Journal of Applied Physics

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First principles calculations are employed to identify atomistic pathways for the generation of vacancy-interstitial pair defects in TiO2. We find that the formation of both oxygen and titanium defects induces a net dipole moment indicating that their formation can be assisted by an electric field. We also show that the activation barrier to formation of an oxygen vacancy defect can be reduced by trapping of holes which may be injected by the electrode. The calculated activation energies suggest that generation of titanium defects is more favorable than generation oxygen defects although activation energies in both cases are relatively high (>3.3 eV). These results provide much needed insight into an issue that has been widely debated but for which little definitive experimental information is available.

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“…Grain boundaries (GBs) in polycrystalline high-j (HK) dielectrics contain high density of electrically active defects, which results in locally varying electrical properties. The GBs favors accumulation of traps, triggering formation of percolation path [1][2][3][4]. These GBs pose a major concern in the reliability of HK and IL in dielectric stacks in advanced CMOS technology.…”

Section: Introductionmentioning

confidence: 99%