Grain boundary barrier height in base and space charge regions

Dugas, J.; Crest, J.P.; Singal, C. M.; Oualid, J.

doi:10.1016/0038-1101(83)90004-7

Cited by 17 publications

(7 citation statements)

References 13 publications

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“…(iii) Grain boundary recombination is negligible in the heavily doped emitter [9] and in the space charge region [10]. This is in agreement with Green [11].…”

Section: Physical Model Of An Elementary Solar Cellsupporting

confidence: 65%

“…According to this model, the thickness of these regions is W e , W and W b respectively. The following considerations have been introduced in order to simplify our model: (i) The grains are considered as columnar and perpendicular to the n + -p junction [9], and their electrical properties are homogeneous (doping concentration, minority carrier mobility, lifetime and diffusion length).…”

Section: Physical Model Of An Elementary Solar Cellmentioning

confidence: 99%

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Effect of Gaussian doping profile on the performance of a thin film polycrystalline solar cell

Kolsi

Amar

Samet

et al. 2012

EPJ Web of Conferences

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Abstract.A two-dimensional (2D) analytical model based on the Green's Function method is applied to an n + -p thin film polycrystalline solar cell that allows us to calculate the conversion efficiency. This model considers the effective Gaussian doping profile in the p region in order to improve cell efficiency. The dependence of mobility and lifetime on grain doping is also investigated. This model is implemented through a simulation program in order to optimize conversion efficiency while varying thickness and doping profile in the base region of the cell. Compared with n + -p standard structure, our proposed structure shows a 43% improvement in conversion efficiency for a polycrystalline solar cell. PACS. 85.30.De Semiconductor-device, characterization, design and modelling. 88.40.hj Efficiency and performance of solar cells.

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“…(iii) Grain boundary recombination is negligible in the heavily doped emitter [9] and in the space charge region [10]. This is in agreement with Green [11].…”

Section: Physical Model Of An Elementary Solar Cellsupporting

confidence: 65%

Section: Physical Model Of An Elementary Solar Cellmentioning

confidence: 99%

Effect of Gaussian doping profile on the performance of a thin film polycrystalline solar cell

Kolsi

Amar

Samet

et al. 2012

EPJ Web of Conferences

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“…Dugas et al 8 used the quasiequilibrium assumption to examine the barrier heights of grain boundaries in base and space charge regions. Despite this simplification they conclude that grain boundaries passing through p-n junctions can lead to significant grain boundary recombination of excess minority carriers.…”

Section: Review Of Past Modelsmentioning

confidence: 99%

Improved modeling of grain boundary recombination in bulk and p-n junction regions of polycrystalline silicon solar cells

Edmiston

Heiser

Sproul

et al. 1996

Journal of Applied Physics

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This article provides a theoretical investigation of recombination at grain boundaries in both bulk and p-n junction regions of silicon solar cells. Previous models of grain boundaries and grain boundary properties are reviewed. A two dimensional numerical model of grain boundary recombination is presented. This numerical model is compared to existing analytical models of grain boundary recombination within both bulk and p-n junction regions of silicon solar cells. This analysis shows that, under some conditions, existing models poorly predict the recombination current at grain boundaries. Within bulk regions of a device, the effective surface recombination velocity at grain boundaries is overestimated in cases where the region around the grain boundary is not fully depleted of majority carriers. For vertical grain boundaries (columnar grains), existing models are shown to underestimate the recombination current within p-n junction depletion regions. This current has an ideality factor of about 1.8. An improved analytical model for grain boundary recombination within the p-n junction depletion region is presented. This model considers the effect of the grain boundary charge on the electric field within the p-n junction depletion region. The grain boundary charge reduces the p-n junction electric field, at the grain boundary, enhancing recombination in this region. This model is in agreement with the numerical results over a wide range of grain boundary recombination rates. In extreme cases, however, the region of enhanced, high ideality factor recombination can extend well outside the p-n junction depletion region. This leads to a breakdown of analytical models for both bulk and p-n junction recombination, necessitating the use of the numerical model.

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“…• Grain boundary recombination is negligible in the emitter [8] and in the space charge region [9] due to their small thickness.…”

Section: A Physical Model Of An Elementary Solar Cellmentioning

confidence: 99%

A new method for improving performances of a polycrystalline solar cell

Kolsi

Amar

2015

IREC2015 the Sixth International Renewable Energy Congress

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In this paper, we present a two-dimensional polycrystalline solar cell model to determine the parameters of the cell, such as the photocurrent, the dark current and the conversion efficiency. In this model, we consider an exponential doping profile of the p-region of the cell and hence the onset of an electric field in this region in order to reduce the minority carrier recombination at grain boundary and at rear contact. Consequently, this improved conversion efficiency of the cell. In order to optimize conversion efficiency, the presented model is implemented through a simulation program while varying thickness and doping concentration in the p-region of the cell. Compared with the case of Dirac's function doping profile, the conversion efficiency is maximal in the case of an exponential doping profile.

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Grain boundary barrier height in base and space charge regions

Cited by 17 publications

References 13 publications

Effect of Gaussian doping profile on the performance of a thin film polycrystalline solar cell

Effect of Gaussian doping profile on the performance of a thin film polycrystalline solar cell

Improved modeling of grain boundary recombination in bulk and p-n junction regions of polycrystalline silicon solar cells

A new method for improving performances of a polycrystalline solar cell

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