Graded index polymer waveguide for high-bandwidth optical circuit

Kinoshita, Ryota; Kitazoe, Katsuma; Horimoto, Akihiro

doi:10.1109/icsj.2016.7801245

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2020

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“…For such applications SOI can no longer be used because of the strong light absorption in silicon at these wavelengths [38]. For a wavelength of 850 nm polymer based waveguide crossings have been reported for the use in optical interconnects [39][40][41][42][43]. The low refractive index contrast in these polymer waveguides allows for very low losses below 0.01 dB/crossing.…”

Section: Introductionmentioning

confidence: 99%

Broadband low loss and ultra-low crosstalk waveguide crossings based on a multimode interferometer for 840 nm operation

Nevlacsil¹,

Müellner²,

Sagmeister³

et al. 2020

OSA Continuum

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Broadband low loss and ultra-low crosstalk waveguide crossings are a crucial component for photonic integrated circuits to allow a higher integration density of functional components and an increased flexibility in the layout. We report the design of optimized silicon nitride waveguide crossings based on multimode interferometer structures for intersecting light paths of TE/TE-like, TM/TM-like and TE/TM-like polarized light in the near infrared wavelength region of 790 nm to 890 nm. The crossing design for diverse polarization modes facilitates dual polarization operation on a single chip. For all configurations the loss of a single crossing was measured to be~0.05 dB at 840 nm. Within the 100 nm bandwidth losses stayed below 0.16 dB. The crosstalk was estimated to be on the order of −60 dB by means of 3D finite difference time domain simulations.

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