2013
DOI: 10.1063/1.4804149
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Graded bandgap structure for PbS/CdS/ZnS quantum-dot-sensitized solar cells with a PbxCd1−xS interlayer

Abstract: To suppress the electron-hole recombination in the multishell sensitizer for quantum-dot-sensitized solar cells (QDSCs), the PbxCd1−xS interlayer is incorporated between the PbS core and CdS shell. The PbS/PbxCd1−xS/CdS structure enhances the cell efficiency by ∼60% compared to PbS/CdS QDSCs, and consequently shows a power-conversion efficiency of 1.37% with ZnS coating. Open-circuit voltage decay confirmed that the PbxCd1−xS interlayer effectively reduces the recombination at the PbS/CdS interface. Furthermor… Show more

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Cited by 46 publications
(30 citation statements)
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“…That is, a ladder-like energy structure suitable for carrier transfer is attained with the incorporation of CdSSe interlayer. Secondly, different from dye molecules, there exist unwanted interfacial defects at the contact interface between QD sensitizers, especially for that of multilayered QDs, which may inevitably be prone to interphase strain between different QD layers [42,43]. As illustrated in panel (b), in comparison with CdS/CdSe, reduced defects and interphase strain between CdS core and CdSe shell layers should be attained for the CdS/CdSSe/CdSe structure, in which the incorporated CdSSe interlayer Table 3 Photovoltaic parameters of CdSe, CdS/CdSe and CdS/CdSSe/CdSe QDSCs.…”
Section: Resultsmentioning
confidence: 99%
“…That is, a ladder-like energy structure suitable for carrier transfer is attained with the incorporation of CdSSe interlayer. Secondly, different from dye molecules, there exist unwanted interfacial defects at the contact interface between QD sensitizers, especially for that of multilayered QDs, which may inevitably be prone to interphase strain between different QD layers [42,43]. As illustrated in panel (b), in comparison with CdS/CdSe, reduced defects and interphase strain between CdS core and CdSe shell layers should be attained for the CdS/CdSSe/CdSe structure, in which the incorporated CdSSe interlayer Table 3 Photovoltaic parameters of CdSe, CdS/CdSe and CdS/CdSSe/CdSe QDSCs.…”
Section: Resultsmentioning
confidence: 99%
“…For the counter electrode, Ti was deposited on the pre-drilled FTO substrates as adhesion layer, and Cu was deposited by rf magnetron sputtering. The Cudeposited films were sulfurized in a polysulfide solution [23], and thermoplastic foil (60 mm: Dupont) was used as a spacer.…”
Section: Cell Fabricationmentioning
confidence: 99%
“…For enhancing the power-conversion efficiency, much research has been focused on the light trapping to fully utilize broadband light with minimum optical losses [10][11][12][13]. Novel light-trapping methods using photonic structures or plasmonic effects are being continuously reported [14,15].…”
Section: Introductionmentioning
confidence: 99%