TiO 2 nanotube arrays have great potentials due to good electron transport along the axis and prospective applications, such as photovoltaic cells, [1][2][3][4][5][6][7] electrochemical devices, [8][9][10] and photocatalysts. [11][12][13][14][15][16] Moreover, more advanced applications would be allowed if the band gap could be controlled to efficiently absorb visible light. Recent reports reveal that nitrogen doping with ion implantation or thermal annealing in ammonia gas can be used to modify the band gap of pure TiO 2 . [17][18][19] Despite these great achievements, the possibility to introduce a large portion of chemisorbed N 2 instead of atomic N states, which could lead to the destruction [20] of the crystal structure of a pure TiO 2 nanotube, still exist.Herein, we report the facile method to selectively introduce atomic N states into a highly ordered TiO 2 nanotube array through plasma-assisted nitrogen doping with minimized chemisorbed molecular N 2 states. This selective atomic N doping preserves the original crystal structure and also gives enhanced photovoltaic performance. After the atomic N doping, the partial density of states (PDOS) near to the Fermi energy level were also changed. N 2p states became predominant near the Fermi level, which is a discrete energy level at the top edge of a valence band, whereas the strong hybridization between Ti 3d and O 2p was lost.The ordered TiO 2 nanotubes were fabricated by electrochemical oxidation in NH 4 F (0.3 wt %) containing an ethylene glycol solution with DC 60 voltage. Figure 1 shows hexagonally organized TiO 2 nanotubes with % 120-150 nm outer diameters and % 100-120 nm hollow holes. The amorphous phase of the as-prepared nanotubes was converted to the crystalline phase through annealing. The crystalline phase was confirmed by the high-resolution TEM (HRTEM) image of a nanotube wall and the Fourier transform image (insets of Figure 1 d). Figure 1 e also shows the crystal structures of nanotubes with different annealing conditions ranging from 500 to 800 8C. The sample annealed at 500 8C for 3 h is in a pure anatase phase. However, the portion of the rutile TiO 2 phase is found to increase as the temperature increases. For the selective atomic nitrogen mediation in TiO 2 nanotubes, the samples were exposed to nitrogen plasma with 500 and 700 W microwave plasma powers.Incorporation of nitrogen into TiO 2 nanotubes treated with the 500 W nitrogen plasma for 3 min was confirmed through the energy dispersive X-ray spectroscopy (EDS) analysis (see Figure 2 a). Figure 2 b,c shows the nitrogenbinding nature confirmed by X-ray photoelectron spectroscopy (XPS). Before the TiO 2 nanotubes were treated with nitrogen plasma, Ti 2p XPS spectra showed two signals at Figure 1. SEM images of a TiO 2 nanotube array after electrochemical oxidation, showing a) top and b) magnified views, HRTEM images of c) an as-prepared TiO 2 nanotube wall and d) a crystallized TiO 2 nanotube wall at 500 8C, and e) XRD patterns of TiO 2 nanotubes crystallized at % 500-800 8C for 3 h.