Good Practices of Electrothermal Simulation of p-n Structures Using Sentaurus TCAD

Wozny, Janusz; Podgorski, Jacek; Raj, Ewa; Lisik, Zbigniew

doi:10.1109/cadsm.2019.8779329

Cited by 2 publications

(3 citation statements)

References 3 publications

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“…However, this model, where no metal layer is present, does not allow the inclusion of heat transport at the interface. In [16], we have shown that this model leads to erroneous results, where the energy conservation principle is not obeyed. It becomes clear that the contact metal layer should be included to get the correct results.…”

Section: Metal-semiconductor Interface Basicsmentioning

confidence: 99%

“…In previous work [16], we have pointed out that for Si and SiC p-n diodes, the energy balance can be obtained even without the dedicated heat generation/absorption model for the MS interface. To achieve these results, the appropriate contact geometry must be ensured.…”

Section: Energy Balance By Doping Profile Modificationmentioning

confidence: 99%

“…Previously [16], we have presented that in the case of Si, to ensure the power conservation principle, the interface between the contact node and Si must contain a metal layer and a highly doped Si region. Here, we would like to present that a similar solution can be applied to GaN and SiC semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

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Influence of the Metal–Semiconductor Interface Model on Power Conservation Principle in a Simulation of Bipolar Devices

2021

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The purpose of the study is to present a proper approach that ensures the energy conservation principle during electrothermal simulations of bipolar devices. The simulations are done using Sentaurus TCAD software from Synopsys. We focus on the drift-diffusion model that is still widely used for power device simulations. We show that without a properly designed contact(metal)–semiconductor interface, the energy conservation is not obeyed when bipolar devices are considered. This should not be accepted for power semiconductor structures, where thermal design issues are the most important. The correct model of the interface is achieved by proper doping and mesh of the contact-semiconductor region or by applying a dedicated model. The discussion is illustrated by simulation results obtained for the GaN p–n structure; additionally, Si and SiC structures are also presented. The results are also supported by a theoretical analysis of interface physics.

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Section: Metal-semiconductor Interface Basicsmentioning

confidence: 99%

Section: Energy Balance By Doping Profile Modificationmentioning

confidence: 99%

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Influence of the Metal–Semiconductor Interface Model on Power Conservation Principle in a Simulation of Bipolar Devices

2021

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Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability

Zhou

Zhang

et al. 2022

AIP Advances

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The commercialization of GaN-based Schottky barrier diodes in middle- and high- voltage applications still faces many challenges, in which the lack of an effective selective area p-type doping method is one of the main obstacles. This paper proposes novel vertical GaN-based Schottky diodes with trench MIS structure and an embedded p-GaN protection layer (junction-trench MIS barrier Schottky diodes, J-TMBS). The trench structure and lateral p-n junctions can be achieved by selectively etching the very thin p-GaN and then regrowing n-GaN. Therefore, the fabrication technology avoids the selective area p-type doping process, and the dry etching damage and poor sidewall regrowth interface issue, which are serious in GaN Merged pn/Schottky (MPS) diodes, can also be alleviated for the proposed J-TMBS. Compared with the optimized GaN trench MIS barrier Schottky (TMBS) diodes, the surge current capability and dielectric reliability of the proposed J-TMBS are significantly improved (the electric field of the dielectric layer and maximum lattice temperature under the surge test can be reduced by 448% and 202%, respectively). In addition, the specific on-resistance ( R on,sp) and breakdown voltage remain basically unchanged compared with TMBS. Compared with the optimized GaN MPS diodes, the proposed structure improves the specific on-resistance by 17.2% benefiting from the reduced area of the JFET region without degrading the reverse I–V characteristics and surge current capability. The proposed J-TMBS exhibits potential in practical high voltage (>600 V) application of GaN Schottky power diodes.

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Good Practices of Electrothermal Simulation of p-n Structures Using Sentaurus TCAD

Cited by 2 publications

References 3 publications

Influence of the Metal–Semiconductor Interface Model on Power Conservation Principle in a Simulation of Bipolar Devices

Influence of the Metal–Semiconductor Interface Model on Power Conservation Principle in a Simulation of Bipolar Devices

Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability

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