Good Charge Balanced Inverted Red InP/ZnSe/ZnS-Quantum Dot Light-Emitting Diode with New High Mobility and Deep HOMO Level Hole Transport Layer

Abstract

Here, we report efficient and stable indium phosphide (InP) based inverted red quantum dot light-emitting diodes (QLEDs) using a new high mobility and deep HOMO level hole transport layer (HTL) and an optimized sol−gel ZnMgO layer. A new hole transport material, DBTA, containing rigid dibenzothiophene and tertiary amine units has been designed with high hole mobility and a deep HOMO level to inject holes faster into the InP-QDs. Also, to decrease the electron transporting property of the ZnMgO NPs, a sol−gel ZnMgO layer with optimum magnesium content (17%), low-temperature annealing (180 °C), and a selfaging process is used on the transparent electrode. The high mobility DBTA and an optimized sol−gel Zn 0.83 Mg 0.17 O layer with the self-aging process are responsible for achieving good charge balance and suppressing nonradiative losses in InP-QLED. The fabricated QLED with DBTA and optimized sol− gel Zn 0.83 Mg 0.17 O exhibited an external quantum efficiency of 21.8%, current efficiency of 23.4 cd/A, and operating lifetime (LT 50 ) of 1095 h at 1000 cd/m 2 .

Two-Dimensional Nanoplatelet Superlattices Overcoming Light Outcoupling Efficiency Limit in Perovskite Quantum Dot Light-Emitting Diodes

“…3e), which to our knowledge, represents the highest external quantum efficiency ever reported in solutionprocessed QD LEDs based on all semiconductor materials. 4,7-9, [52][53][54][55][56][57][58] In another device, the peak ηCE and power efficiency, ηPE, reach 107.5 cd A -1 and 112.5 lm W -1 (Supplementary Fig. 13), respectively, comparable to the state-of-the-art OLEDs.…”

P‐6.9: Patterning of Quantum Dots Light‐emitting Diodes Based on IGZO Films

“…The distinguishing charge transport capacity between IGZO films (μe~10 cm 2 V -1 s -1 ) and organic hole transport layers (μh~10 -4 cm 2 V -1 s -1 ) worsens the situation. (21)(22)(23)(24) Figure 2 demonstrates the basic performance of IGZO based patterned QLED. The whole device with IGZO pattern (Figure 2 (a)) shows a patterned emission due to the thickness variation in Figure 2 (b).…”

An efficient organic and inorganic hybrid interlayer for high performance inverted red cadmium-free quantum dot light-emitting diodes

“…The QLED device structure and energy band diagram was shown in Fig. 3 (PCBBiF) 31 , 1,4,5,8,9,11hexaazatriphenylenehexcarbonitrile (HATCN) as hole transport layers(HTLs), hole injection layer (HIL) and aluminium (Al) as anode. The effect of ZnO:BPPB interlayer on the device performance was analysed.…”

“…In the literature for inverted QLED devices, the acceleration factor (n) of device lifetime is near to ~1.8. 31,34,37 .…”