Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

Plissard, SR Sebastien; Dick, Kimberly A.; Wallart, X.; Caroff, Philippe

doi:10.1063/1.3367746

Cited by 90 publications

(95 citation statements)

References 16 publications

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“…6 So far, reports on antimonide-arsenide alloy nanowires are sparse, focusing mostly on GaAsSb. 7,8 In this letter, we demonstrate metalorganic vapor phase epitaxy ͑MOVPE͒ of InAs/ InAs 1−x Sb x heterostructure nanowires over a wide composition range ͑x = 0.08-0.77͒. The chemical composition of the nanowires and the simultaneously grown epilayer is determined by high resolution x-ray diffraction ͑HRXRD͒ using a conventional lab-setup.…”

Section: Enhanced Sb Incorporation In Inassb Nanowires Grown By Metalmentioning

confidence: 99%

Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

Borg

Dick

Eymery

et al. 2011

Applied Physics Letters

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We demonstrate metalorganic vapor phase epitaxy of InAs1−xSbx nanowires (x=0.08–0.77) for applications in high-speed electronics and long-wavelength optical devices. The composition of the InAsSb nanowires and InAsSb epilayers on the same sample is independently determined using lab-setup high resolution x-ray diffraction, by making use of the size-dependent in-plane broadening of the nanowire Bragg peak. We find that the incorporation of Sb into the nanowires is significantly higher than for planar epitaxy under the same growth conditions. Thermodynamic calculations indicate that this is due to a dramatically decreased effective V/III ratio at the particle/nanowire interface.

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Section: Enhanced Sb Incorporation In Inassb Nanowires Grown By Metalmentioning

confidence: 99%

Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

Borg

Dick

Eymery

et al. 2011

Applied Physics Letters

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“…[4][5][6] In the case of GaAs, Au-free NW growth has been obtained for selected substrate and growth conditions, with Ga nanoparticles found at the tip of the resulting NWs. [7][8][9][10][11][12][13][14] Using a VLS-like model, NW growth has been associated with the formation of Ga nanoparticles, which promote one-dimensional growth. [7][8][9][10][11][12][13][14] An important general feature of GaAs NWs obtained by Ga-assisted growth is their prevalent zincblende (ZB) crystal structure, 9,10,13,14 in contrast with the wurtzite (WZ) structure commonly observed during Au-catalyzed growth.…”

Section: Introductionmentioning

confidence: 99%

Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires

et al. 2011

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We report on the morphological and structural properties of GaAs nanowires nucleated by self-catalyzed vapor-liquid-solid processes by molecular beam epitaxy on Si-treated GaAs substrates. We found that GaAs nanowires display zincblende and/or wurtzite phase depending on the As/Ga abundance ratio at the growth front, that determines the size and supersaturation of the Ga nanoparticles at the nanowire tip. We also found that even when growth conditions lead to the disappearance of such Ga nanoparticles, preferential one-dimensional growth continues through a vapor-solid mechanism. The nanowire portions grown by vapor solid mechanism display zincblend structure

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“…This has attracted quite a bit of attention thanks to the simplicity of the process normally utilizing the most handy/cheap silicon/SiO 2 substrate [10][11][12][13][14]. Si/SiO 2 substrates are successfully used for growth of III-V NWs, in particular GaAs NWs [15][16][17]. Self-assisted InAs NWs typically grow with quite prominent [011] facets [18].…”

Section: Introductionmentioning

confidence: 99%

MBE growth of self-assisted InAs nanowires on graphene

Kang

Ronen

Cohen

et al. 2016

Semicond. Sci. Technol.

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Abstract. Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, Multiple Andreev Reflections were observed, and an inelastic scattering length of about 900 nm was derived.

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Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

Cited by 90 publications

References 16 publications

Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires

MBE growth of self-assisted InAs nanowires on graphene

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