1984
DOI: 10.1007/bf03214672
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Gold contacts to semiconductor devices

Abstract: The electronics revolution led by computers and microprocessors is based on the silicon integrated circuit. Gold contactsplayakey role in the fabrication of integratedcircuits. For microwave devices and integrated circuits made from compoundsemiconductors such as gallium arsenide, gold metallization is used for both ohmic and rectifying contacts.The world-wide explosion in information-processing and in automation for industry is a direct result of the widespread availability of the integrated circuits containe… Show more

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Cited by 14 publications
(6 citation statements)
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“…At the Au/WS 2 interface, a Schottky junction is formed between the WS 2 QDs and the Au NPs. On the other hand, at the p-Si/Au interface, an Ohmic-type contact is formed, which does not partake in any rectification. , In the present case, during the RTA process, Au atoms from the Au layer diffuse into the Si layer and form a disordered Au–Si alloy with low resistivity, as reported in the literature . Further, when the Au electrode is deposited on the Au NPs, the contact with the Si layer becomes uniform, and this ensures low contact resistance, resulting in reasonably good Ohmic contact with the Si layer and it helps in efficient charge extraction.…”
Section: Results and Discussionmentioning
confidence: 99%
“…At the Au/WS 2 interface, a Schottky junction is formed between the WS 2 QDs and the Au NPs. On the other hand, at the p-Si/Au interface, an Ohmic-type contact is formed, which does not partake in any rectification. , In the present case, during the RTA process, Au atoms from the Au layer diffuse into the Si layer and form a disordered Au–Si alloy with low resistivity, as reported in the literature . Further, when the Au electrode is deposited on the Au NPs, the contact with the Si layer becomes uniform, and this ensures low contact resistance, resulting in reasonably good Ohmic contact with the Si layer and it helps in efficient charge extraction.…”
Section: Results and Discussionmentioning
confidence: 99%
“…Samples were measured in the temperature range from 2 to 300 K and a magnetic field perpendicular to the sample plane swept from -5 T to 5 T. Prior to the electrical measurements, the native SiO2 layer was removed by HF etching. Subsequently, gold electrodes were sputtered onto the four corners of the squarelike samples to ensure Ohmic contact [30]. Silver glue was used to contact the wires to the gold electrodes.…”
Section: B Experimental Detailsmentioning
confidence: 99%
“…• Microelectronics, and especially in the production of connectors and contacts to semiconductors [73], • Photographic flash devices, • Photographic films [74,75] • Phosphors [76] for use, for example, on TV screens, • The glazing of buildings [77], • The form of radioisotopes in medicine [9,78], • Solar energy devices [79], • Special soldering and brazing alloys [9], • Catalysts [80] and, A large number of high technology instruments for monitoring and controlling temperature, pressure, humidity etc. [9].…”
Section: Miscellaneousmentioning
confidence: 99%