GO Replaces PEDOT:PSS as the Hole Injection Layer of Quantum Dot Light-Emitting Diodes

Abstract

In this paper, graphene oxide is used instead of poly (3,4-ethylenedioxythiophene): poly (phenylethylenesulfonic acid) PEDOT:PSS as the hole injection layer of quantum dot light-emitting diodes. The experimental results prove that graphene oxide irradiated with ultraviolet for an appropriate time can improve the performance of the device. Compared with traditional devices, the luminance is increased by 1.9 times and current efficiency of the device is increased 2.4 times. In addition, the turn-on voltage was reduced from 2.8 V to 2.4 V. The improvement of these photoelectric properties is mainly due to the fact that graphene oxide after ultraviolet irradiation can form a good energy level structure with the anode and the hole transport layer, which is more conducive to hole injection.