GMR angle detector with an artificial antiferromagnetic subsystem (AAF)

Berg, Holger; Clemens, W.; Gieres, G.; Rupp, G.; Vieth, M.; Wecker, J.; Zoll, S.

doi:10.1016/s0304-8853(96)00607-5

Cited by 84 publications

(41 citation statements)

References 5 publications

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“…The SAF also gives the advantages of reducing the blocking temperature dispersion of the reference electrode, 9 of increasing its rigidity against rotation 10 and of decreasing its stray field. These properties ensure the magnetization stability of the reference electrode and the decoupling between the two electrodes.…”

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confidence: 99%

Wide range and tunable linear magnetic tunnel junction sensor using two exchange pinned electrodes

Négulescu

Lacour

Montaigne

et al. 2009

Applied Physics Letters

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A magnetic tunnel junction sensor is proposed, with both the detection and the reference layers pinned by IrMn. Using the differences in the blocking temperatures of the IrMn films with different thicknesses, crossed anisotropies can be induced between the detection and the reference electrodes. The pinning of the sensing electrode ensures a linear and reversible output.It also allows tuning both the sensitivity and the linear range of the sensor. The authors show that the sensitivity varies linearly with the ferromagnetic thickness of the detection electrode. It is demonstrated that an increased thickness leads to a rise of sensitivity and a reduction of the operating range.

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confidence: 99%

Wide range and tunable linear magnetic tunnel junction sensor using two exchange pinned electrodes

Négulescu

Lacour

Montaigne

et al. 2009

Applied Physics Letters

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“…The intrinsic instability of the AAF can be reduced by tuning its net magnetic moment to smaller values via a change in the thickness of both Co layers. This lowers the torque the external field exerts on the AAF and thereby enhances its rigidity [30].…”

Section: Results and Discussion 421 Rotating And Switching Cyclesmentioning

confidence: 99%

“…The magnetically hard electrode of the MTJs discussed here consists of a simple artificial antiferromagnet (AAF) Co/Cu/Co or CoFe/Ru/CoFe exchange biased by IrMn [25,30]. The layer stacks are deposited in a dc magnetron sputtering system with a base pressure of 5 × 10 -8 mbar on the native oxide of Si(100) wafers.…”

Section: Experimental -Tmrmentioning

confidence: 99%

Spinelectronics and its applications

Reiss

Brückl

Hütten

et al. 2003

Physica Status Solidi (b)

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The discovery of antiferromagnetic coupling in metallic Fe/Cr multilayers by Grünberg has triggered enormous research activities in the area of magnetic thin films. Additionally, the resistance of multilayers in the antiferromagnetic state is higher than in the parallel state at magnetic saturation. This Giant Magneto Resistance is caused by spin-dependent scattering of the conduction electrons in the magnetic layers. For applications, however, moderate saturation fields, tailorable resistance characteristics and good temperature stability are required. Additional opportunities are opened by a similar effect in magnetic tunnel junctions. Here, the tunneling probability depends on the relative orientation of the magnetizations of the electrodes and thus a large dependence of the tunneling current on an external magnetic field can be found. This effect is usually called Tunneling Magneto Resistance and can again be used both for detecting external fields as well as for information storage. Much more possible applications are still ahead, especially after the finding of magnetoelectronic effects in semiconductors. In this contribution, we will sketch basic physics of these effects and give examples for current developments. IntroductionThe discovery of antiferromagnetic coupling (AFC) in metallic Fe/Cr multilayers by Peter Grünberg [1] has triggered enormous research activities in the area of magnetic thin films. The underlying oscillatory exchange interaction between the magnetic layers mediated by the nonmagnetic spacer layers has subsequently been identified as a Ruderman-Kittel-Kasuya-Yosida (RKKY) like interaction between two thin magnetic sheets embedded in a free electron gas (e.g., [2]), mediated most probably by spin polarized quantum well states.The resistance of multilayers in the antiferromagnetic state is higher than in the parallel state at magnetic saturation. This effect, called Giant Magneto Resistance (GMR), is caused by spin-dependent scattering of the conduction electrons in the magnetic layer and the change in the relative, exchange splitted band structure during the magnetization process. Besides applications in storage devices, the GMR can be exploited to read information from a magnetic disk or in magnetic sensor devices for automotive applications. For the latter, however, moderate saturation fields, good linearity and negligible hysteresis effects are required.Additional opportunities are opened by a similar effect occurring in magnetic tunnel junctions (MTJ's) consisting of, e.g., two different ferromagnetic electrodes separated by a thin insulator (Al 2 O 3 in most cases). Here, the tunneling probability depends on the relative orientation of the magnetizations of the electrodes and thus a large dependence of the tunneling current on an external magnetic field can be found. This effect is usually called Tunneling Magneto Resistance (TMR) and can again be used both for detecting external fields as well as for information storage.

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“…In its simplest form, an artificial ferrimagnet is a system with two ferromagnetic layers that are strongly antiferromagnetically coupled across metallic interlayer [4]. The torque exerted by the external field is proportional to the relatively small net magnetic moment of such a configuration with oppositely directed magnetization.…”

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confidence: 99%