“…As a rule, Al2O3 of the aforementioned structure is formed in aqueous solutions of various electrolytes (acids, alkalis, salts or their combinations) in the galvanic or potentiostatic mode [5][6][7]. Since 1962, the possibility of electrolysis of the formation of an oxide film in chemically pure water was demonstrated by the authors on the example of Si n-and p-types [8], and in 2019 under the same anodizing conditions on the example of Ti, W, In, Ga, Nb, Al, Ta, including Si, we detected their electro-generated luminescence (EL) [9,10]. Further studies showed that this phenomenon is directly related not only to the presence of oxide films of certain thicknesses, but also to the morphology of their structure, which changes during electrolysis, and thus affects the EL brightness.…”