Glossar

Steady-state photocarrier grating method of determining electronic states parameters in amorphous semiconductors

“…In some cases it is necessary to use typical values of semiconductor parameters measured by other investigators. In the presented work we had used values of parameters given in [16] and [30]. Tables 2 and 3).…”

“…Other parameters describing optical properties, DOS, recombination and carriers mobilities must be taken from another experiment performed on the same semiconductor, e.g., from investigations of optical transmittance and reflectance. Some parameters can be determined by standard investigations of the dependence of photoconductivity in uniformly illuminated sample on temperature, wavelength and intensity of radiation [30]. In some cases it is necessary to use typical values of semiconductor parameters measured by other investigators.…”

“…Such calculated DOS (solid curve in Fig. 17) is somehow different from the DOS evaluated from the standard photoconductivity measurements [30] (i.e. measurements of photoconductivity as a function of temperature, wavelength and intensity of radiation).…”

“…19 presents Tables 2 and 3; -the initial values of parameters presented in Table 2 and g 0kj = 0.97; (I 1 + I 2 = 6.5 AE 10 21 photon/(m 2 s), k = 488 nm). -density of electronic states determined using the standard PC method of investigations [30]). values of the diffusion length evaluated with the standard method of SSPG measurements for different wavelengths and intensities of illumination.…”