2021
DOI: 10.1038/s41598-021-89410-1
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Global optimization of an encapsulated Si/SiO$$_2$$ L3 cavity with a 43 million quality factor

Abstract: We optimize a silica-encapsulated silicon L3 photonic crystal cavity for ultra-high quality factor by means of a global optimization strategy, where the closest holes surrounding the cavity are varied to minimize out-of-plane losses. We find an optimal value of $$Q_c=4.33\times 10^7$$ Q c = 4.33 × 10 … Show more

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Cited by 13 publications
(11 citation statements)
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“…Thus, our H1 PCNs can be expected to have 𝑄 exp values as high as those ones. In addition, our optimal 𝑄 th /𝑉 opt = 1.9 × 10 8 (𝑛/𝜆) 3 is slightly better than another L3 nanocavity with 𝑄 th /𝑉 = 1.7 × 10 8 (𝑛/𝜆) 3 (𝑄 th = 1.9 × 10 8 and 𝑉 = 1.1(𝜆/𝑛) 3 ) designed by the particle-swarm algorithm [65]. In summary, we showed designs of H1 PCNs based on a manual or brute-force search for extremely high-𝑄 hexapole modes.…”
Section: Modal Propertiesmentioning
confidence: 79%
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“…Thus, our H1 PCNs can be expected to have 𝑄 exp values as high as those ones. In addition, our optimal 𝑄 th /𝑉 opt = 1.9 × 10 8 (𝑛/𝜆) 3 is slightly better than another L3 nanocavity with 𝑄 th /𝑉 = 1.7 × 10 8 (𝑛/𝜆) 3 (𝑄 th = 1.9 × 10 8 and 𝑉 = 1.1(𝜆/𝑛) 3 ) designed by the particle-swarm algorithm [65]. In summary, we showed designs of H1 PCNs based on a manual or brute-force search for extremely high-𝑄 hexapole modes.…”
Section: Modal Propertiesmentioning
confidence: 79%
“…As illustrated in Fig. 1(a), our design uses only four parameters (𝑅 0 , 𝑅 the 𝑄 factor, unlike recent designs based on costly optimizations of many variables [62][63][64][65]. 𝑅 0 determines the filling factor of the PhC, which is related to its photonic band gap and thus the in-plane modal confinement.…”
Section: Structure and Schemementioning
confidence: 99%
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“…The photonic device platform we develop is based on the L3 PhC cavity in a GaAs membrane. L3 cavities have been extensively optimized and have both very high cavity quality factor (high Q ) and low mode volume, both of which are requirements for reaching the strong coupling regime. The fundamental challenge to applying local electric fields to individual qubits within a cavity such as L3 is that any sort of local electrode that sits proud of the surface necessarily produces a scattering site that destroys the cavity Q . n- and p-electrodes can be incorporated into the membrane to enable application of an electric field within a fully planar structure, eliminating the scattering.…”
Section: Introductionmentioning
confidence: 99%
“…We first use COMSOL simulations to show that this cut cavity design permits the application of distinct electric fields to the two spatially separated qubits with negligible cross talk. We then use finite difference time domain simulations to adjust the cavity design to achieve a cavity Q of 20,000 while remaining within the parameter space that allows such a device to be fabricated using the existing methods. We note that we chose a numerical optimization process that allowed us to rapidly determine the viability of this approach, and as a result, there is likely room for significant additional improvement with the application of more sophisticated inverse design, genetic algorithm, or machine learning approaches. , …”
Section: Introductionmentioning
confidence: 99%