Glassy GaS: transparent and unusually rigid thin films for visible to mid-IR memory applications

Tverjanovich, A. S.; Khomenko, M. D.; Bereznev, Sergei; Fontanari, Daniele; Sokolov, Anton; Usuki, Takeshi; Ohara, Koji; Coq, David Le; Masselin, P.; Бычков, Е.

doi:10.1039/d0cp04697c

Cited by 15 publications

(20 citation statements)

References 89 publications

(105 reference statements)

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“…GaS holds a special place in the family of layered monochalcogenides because of its wide energy bandgap, which extends up to the UV region. Specifically, GaS is a wide, indirect bandgap semiconductor with experimental bandgap values reported in the range from 2.34 to 2.62 eV depending on the deposition technique [ 5 , 6 , 7 , 8 , 9 , 10 ], whereas values of 3.02 eV [ 11 ] and 3.33 eV [ 12 ] of the indirect bandgap have been reported for bilayer and monolayer GaS, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Interplay between Thickness, Defects, Optical Properties, and Photoconductivity at the Centimeter Scale in Layered GaS

et al. 2022

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From the group-III monochalcogenide (MX, M = Ga, In; X = S, Se, Te) layered semiconductors, gallium monosulfide, GaS, has emerged as a promising material for electronics, optoelectronics, and catalysis applications. In this work, GaS samples of various thicknesses in the range from 38 to 1665 nm have been obtained by mechanical exfoliation to study the interplay between structural, morphological, optical, and photoresponsivity properties as a function of thickness. This interplay has been established by analyzing the structure through Raman spectroscopy and X-ray diffraction, the morphology through scanning electron microscopy and atomic force microscopy, the density and optical properties through spectroscopic ellipsometry, and the photoresponsivity through current–voltage measurements under UV light. This work shows that photoresponsivity increases with increases in GaS thickness, resulting in a UV photoresponsivity of 1.5·10−4 AW−1 stable over several on/off cycles.

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Section: Introductionmentioning

confidence: 99%

“…A few layers of GaS can be deposited by different methods, such as chemical vapor deposition (CVD) [ 13 , 14 ], transport reaction [ 5 , 9 ], pulsed laser deposition [ 10 , 15 ], and mechanical exfoliation [ 3 , 16 ].…”

Section: Introductionmentioning

confidence: 99%

Interplay between Thickness, Defects, Optical Properties, and Photoconductivity at the Centimeter Scale in Layered GaS

et al. 2022

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“…Because of its graphene-like hexagonal structure, it can be predicted that there are still more application prospects to be explored [52,53]. Different atomic structures of GaS can be obtained by different growth methods [54][55][56]. Considering the application potential of GaS in the field of nonlinear optics, there is a strong motivation for one to improve the quality of GaS in terms of size and purity [57].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Hexagonal Structured GaS Nanosheets for Robust Femtosecond Pulse Generation

Guo

Liu

et al. 2022

Nanomaterials

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Gallium sulfide (GaS), with a hexagonal structure, has received extensive attention due to its graphene-like structure and derived optical properties. Here, high-quality GaS was obtained via chemical vapor synthesis and then prepared as a saturable absorber by the stamp-assisted localization-transfer technique onto fiber end face. The stability of the material and the laser damage threshold are maintained due to the optimized thickness and the cavity integration form. The potential of the GaS for nonlinear optics is explored by constructing a GaS-based Erbium-doped mode-locked fiber laser. Stable femtosecond (~448 fs) mode-locking operation of the single pulse train is achieved, and the robust mode-locked operation (>30 days) was recorded. Experimental results show the potential of GaS for multi-functional ultrafast high-power lasers and promote continuous research on graphene-like materials in nonlinear optics and photonics.

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“…So far, GaS material has been utilized for significant applications in terahertz generation, photodetector, solar energy conversion, hydrogen evolution catalysis, flexible electronics, and nonlinear optics. − However, till now, no considerable investigation regarding the saturable absorption performance of the GaS material has been done. Recently, it has been demonstrated that GaS thin films can exhibit a significant change in NLO behavior due to their phase transition properties, making them a viable candidate for visible to mid-infrared spectral range applications . Therefore, it is worthwhile to investigate 2D-GaS material as a SA to generate broadband ultrafast laser pulses and realize its performance in ultrafast photonics applications.…”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Gallium Sulfide as a Novel Saturable Absorber for Broadband Ultrafast Photonics Applications

Ahmed

Qiao

Cheng

et al. 2021

ACS Appl. Mater. Interfaces

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Two-dimensional (2D) gallium sulfide (GaS) offers a plethora of exceptional electrical and optical properties, allowing it to be used in a wide range of applications, including photodetectors, hydrogen generation, and nonlinear optical devices. In this paper, ultrathin 2D GaS nanosheets are synthesized using the liquid-phase exfoliation method, and the structure, morphology, and chemical composition of the as-prepared nanosheets are extensively investigated. After depositing 2D GaS nanosheets on side polished fibers, successful saturable absorbers (SAs) are fabricated for the first time. The realized modulation depths are 10 and 5.3% at 1 and 1.5 μm, respectively, indicating the wideband saturable absorption performance of the prepared SAs. By integrating GaS-SAs into three different wavelength-based fiber laser cavities, stable mode-locked pulses are achieved, having pulse durations of 46.22 ps (1 μm), 614 fs (1.5 μm), and 1.02 ps (2 μm), respectively. Additionally, different orders of harmonic mode-locked pulses with the highest repetition rate of 0.55 GHz (45th order) and Q-switched pulses with the shortest pulse duration of 2.2 μs are obtained in the telecommunication waveband. These findings suggest that 2D GaS has a lot of potential for broadband ultrafast photonics in nonlinear photonics devices.

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Glassy GaS: transparent and unusually rigid thin films for visible to mid-IR memory applications

Abstract: Phase-change materials based on tellurides are widely used for optical storage (DVD and Blu-ray disks), non-volatile random access memories and for development of neuromorphic computing. Narrow-gap tellurides are intrinsically limited...

Cited by 15 publications

References 89 publications

Interplay between Thickness, Defects, Optical Properties, and Photoconductivity at the Centimeter Scale in Layered GaS

Interplay between Thickness, Defects, Optical Properties, and Photoconductivity at the Centimeter Scale in Layered GaS

Synthesis of Hexagonal Structured GaS Nanosheets for Robust Femtosecond Pulse Generation

Two-Dimensional Gallium Sulfide as a Novel Saturable Absorber for Broadband Ultrafast Photonics Applications

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