1981
DOI: 10.1016/0022-3093(81)90184-8
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Glass transition temperature dependence on heating rate and on ageing for amorphous selenium films

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1983
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Cited by 90 publications
(26 citation statements)
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“…The activation energy E, is determined using the theory of glass transition kinetics and structural relaxation as developed by Moynihan and other workers, [10][11][12] from the heating rate dependence of the glass transition temperature. The commonly used approach to evaluate the activation energy of glass transition is the Moynihan's method 13 and the equation is given by (1) where, β is the heating rate, and R is the universal gas constant.…”
Section: Different Methods To Evaluate Activation Energy E Using T Gmentioning
confidence: 99%
“…The activation energy E, is determined using the theory of glass transition kinetics and structural relaxation as developed by Moynihan and other workers, [10][11][12] from the heating rate dependence of the glass transition temperature. The commonly used approach to evaluate the activation energy of glass transition is the Moynihan's method 13 and the equation is given by (1) where, β is the heating rate, and R is the universal gas constant.…”
Section: Different Methods To Evaluate Activation Energy E Using T Gmentioning
confidence: 99%
“…Then, following Tool [7], it is usual to separate the temperature dependenceflT) and the structural variation g(a) (cooperative effects). In this model, used in many previous works [ 1 ], the relaxation time can be given by:…”
Section: Theoretical Developmentmentioning
confidence: 99%
“…In order to describe the physical dependence of the relaxation rate on both temperature and structure (i.e. the departure from equilibrium), the relaxation time "~ is assumed to take a simple form, used previously by most authors [ 1 ],…”
Section: Introductionmentioning
confidence: 99%
“…Thin selenium films also found a booming way in the fabrication of other solid-state devices such as Schottky diodes, solar cells and photovoltaic junctions (Ito et al, 1982;Touihri et al, 1997;Bernede et al, 1998;Lakshmi, 2001;Mukolu, 2004;Iyayi & Oberafo, 2005;Joshi & Lokhande, 2006;El-Nahass et al, 2006). Undoped a-Se is a typical p-type semiconducting chalcogenide glassy material with a high dc dark electrical resistivity (10 Ω cm at 300 K) (Mott & Davis, 1979;Kolobov, 1996;Abdul-Gader et al, 1998;El-Zawawi & Abd-Alla, 1999); however, its glass-transformation temperature T is low (below 50 , depending on its definition and experimental procedure used to define it (Grenet et al, 1980;Larmagnac et al, 1981;Kasap & Juhasz, 1986;Kasap et al, 1990;Pejova & Grozdanov, 2001;Tonchev & Kasap, 2002)). Thus, it is only possible to exploit inherent physical properties of as-deposited undoped a-Se films at low ambient temperatures, after ageing them in dark and humidity-free environment to reach structural relaxation.…”
Section: Introductionmentioning
confidence: 99%