Nanocrystallization of amorphous ZrCu was induced by applying a pulse current (electropulsing), which exponentially decayed from a certain initial current density (i d0) with the time constant of 3 ms. For electropulsing, the ribbon specimen was sandwiched between high-thermalconductive AlN (thermal conductivity ¬ = 170 W/m/K at 273 K) plates to remove the Joule heat. Nanocrystallization was found when electropulsing was conducted in a vacuum below 10 ¹2 Pa at the pulse current of i d0 ² 0.6 GA/m 2. In contrast, electropulsing conducted under 10 5 Pa He (¬ = 0.144 W/m/K at 273 K) required i d0 above 1.1 GA/m 2. Thermal conductivity and heat capacity of 10 5 Pa He were negligibly smaller than those of the AlN plates. The increase in i d0 for nanocrystallization with increasing He pressure indicates that He penetrated the amorphous structure to inhibit the activation of cooperative motions of many atoms and larger i d0 is required for nanocrystallization at higher He pressure.