Glancing-incidence X-ray analysis of ZnO thin films and ZnO/ZnMgO heterostructures grown by laser-MBE

Yang, Xiaodong; Zhang, Jingwen; Bi, Zhen; He, Yongning; Xu, Qin; Wang, Hongbo; zhang, Weifeng; Hou, Xun

doi:10.1016/j.jcrysgro.2005.06.028

Cited by 14 publications

(8 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High-quality ZnO thin films have been prepared by several thin film deposition techniques, including pulsed laser deposition [12], chemical vapor deposition [13], molecular beam epitaxy [14], sputtering [15], etc.…”

Section: Introductionmentioning

confidence: 99%

An electromechanical perspective on the metal/solution interfacial region during the metallic zinc electrodeposition

Agrisuelas

Garcı́a-Jareño

Giménez-Romero

et al. 2009

Electrochimica Acta

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

An electromechanical perspective on the metal/solution interfacial region during the metallic zinc electrodeposition

Agrisuelas

Garcı́a-Jareño

Giménez-Romero

et al. 2009

Electrochimica Acta

View full text Add to dashboard Cite

“…It is well known that the Kiessig fringes of the XRR curve were very sensitive to the interface and surface roughness, and a rough surface in excess of 2 nm will cause a severe decay in reflection intensity and mask the presence of any smooth buried heterointerfaces [17,18]. Figure 1 shows the specula of XRR scans that were obtained from samples Bi-1-4 and Cu-1-4 films deposited on the glass substrates.…”

Section: Resultsmentioning

confidence: 99%

Accurate measurement of deposition rates for growth of Bi‐based oxide thin films

Zhang¹,

Qi²

2011

Cryst. Res. Technol.

View full text Add to dashboard Cite

Key words deposition rate, X-ray reflectivity, surface profiler, molecular beam epitaxy.Bi-based oxide thin films are important superconducting materials because of its wide applicability, high transition temperatures, and low toxicity. To achieve high quality Bi-based oxide thin films by molecular beam epitaxy (MBE), the composition is a key parameter. Here, Bi, Cu, Cu/Sr and Cu/Ca thin films on glass substrates prepared by MBE have been examined by using both X-ray reflectivity and surface profiler. The thickness and surface roughness were obtained through calculation and simulation. In comparison with the film thicknesses measured by these two methods, they are in good agreement. The lines of thickness deposition rate (R) versus source temperature (T) are according with LogR=a+b/T based on ClausiusClapeyron equation. Moreover, the Bi 2.1 Ca y Sr 1.9-y CuO 6+δ thin films with different composition and thickness were successfully prepared by MBE by applying the thickness deposition rate lines.

show abstract

“…[11] gave a precious data to the researchers investigating exclusively the optical constants of ZnO. All these works show the important roles which play the zinc oxide in the new technology reason why the authors continued to study it for more information and applications [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. Beside the experimental methods, certain authors used models to investigate the physical properties of the zinc oxide or others semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution

Diouf¹

2017

AJOP

View full text Add to dashboard Cite

Abstract:The Photoluminescence spectra at low temperature of the a-plane oriented ZnO grown on r-plane (011-2) sapphire substrates by plasma-assisted molecular beam epitaxy, showed experimentally three types of excitons A, B and C. In the reflectivity spectra, authors used a program based on the theory of the spatial resonance dispersion Hopfield model to fit the free excitons. The A and B free excitons were fitted together and the C exciton with the band gap. But these fits were not perfect in the transparency zone at low energy. This is mainly due to the fact that the A and B free excitons are closer and the C exciton is closer to the band gap but another reason is the value of the oscillator strength. In the present work, we present a method taking account the Gaussian distribution, to fit perfectly the excitons A, B and C using almost the same physical parameters than the theory of the spatial resonance dispersion Hopfield model.

show abstract

Glancing-incidence X-ray analysis of ZnO thin films and ZnO/ZnMgO heterostructures grown by laser-MBE

Cited by 14 publications

References 21 publications

An electromechanical perspective on the metal/solution interfacial region during the metallic zinc electrodeposition

An electromechanical perspective on the metal/solution interfacial region during the metallic zinc electrodeposition

Accurate measurement of deposition rates for growth of Bi‐based oxide thin films

Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution

Contact Info

Product

Resources

About