Ginzburg–Landau theory of Josephson field effect transistors

Betouras, Joseph J.; Joynt, Robert; Dong, Z. W.; Venkatesan, T.; Hadley, P.

doi:10.1063/1.117661

Cited by 5 publications

(6 citation statements)

References 14 publications

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“…Various models have been proposed to explain the effects of electric fields on grain-boundary transport. Using a Ginzburg-Landau-based model it was shown that the I c changes observed by Dong and collaborators are consistent with a field-induced change in the carrier density in the Josephson junction (Betouras et al, 1996). As the measured I c changes were found to scale with the field-dependent, nonlinear dielectric constant of the gate insulator ⑀ r , it was proposed that the effects were caused by an assumed giant piezoelectric effect of the epitaxial SrTiO 3 gate layer (Petersen, Takeuchi, et al, 1995;Windt et al, 1999; see also Grupp and Goldman, 1997).…”

Section: A Applied Electric Fieldsmentioning

confidence: 66%

Grain boundaries in high-Tcsuperconductors

2002

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Since the first days of high-T c superconductivity, the materials science and the physics of grain boundaries in superconducting compounds have developed into fascinating fields of research. Unique electronic properties, different from those of the grain boundaries in conventional metallic superconductors, have made grain boundaries formed by high-T c cuprates important tools for basic science. They are moreover a key issue for electronic and large-scale applications of high-T c superconductivity. The aim of this review is to give a summary of this broad and dynamic field. Starting with an introduction to grain boundaries and a discussion of the techniques established to prepare them individually and in a well-defined manner, the authors present their structure and transport properties. These provide the basis for a survey of the theoretical models developed to describe grain-boundary behavior. Following these discussions, the enormous impact of grain boundaries on fundamental studies is reviewed, as well as high-power and electronic device applications. CONTENTS I. Introduction 485 II. Introduction to Grain Boundaries 486 III. Preparation of Single Grain Boundaries 488 A. Bicrystalline junctions 489 B. Biepitaxial junctions 489 C. Step-edge junctions 491 IV. Structural Properties 491 V. Transport Properties of Grain Boundaries 496 A. Current-voltage characteristics 496 B. Critical current density 498 1. Dependence on grain-boundary angle 498 2. Temperature dependence of the critical currents 502 3. Magnetic-field dependence of the critical currents 502 C. Current-phase relation 504 D. Normal-state resistivity 504 E. The I c R n product 505 F. Grain-boundary capacitance 506 G. Microwave properties 507 H. Grain-boundary noise 507 I. Self-generated magnetic flux 509 J. Penetration of magnetic flux into grain boundaries 510 VI. Effects of Doping 510 VII. Grain-Boundary Mechanisms 511 A. Mechanisms based on structural properties 511 B. Mechanisms based on deviations from ideal stoichiometry 512 C. Order-parameter symmetry-based mechanisms 514 D. Interface charging and band bending 515 E. Mechanisms based on direct suppression of the pairing mechanism 516 VIII. Control of Grain Boundaries with Electric Fields or Quasiparticle Injection 517 A. Applied electric fields 517 B. Quasiparticle injection 518 IX. Irradiation of Grain Boundaries 518 A. Irradiation with electrons 518 B. Irradiation with light 518 C. Irradiation with ions 519 X. Bulk Applications 519 A. Powder-in-tube method 520 B. Coated conductors 520 XI. Applications of Grain Boundaries in Thin Films 522 A. SQUIDs 522 B. Radiation detectors and spectrometers 524 C. Three-terminal devices 525 D. Superconducting logic circuits 526 E. Research devices 526 XII. Summary and Outlook 528 Acknowledgments 529 References 529

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Section: A Applied Electric Fieldsmentioning

confidence: 66%

Grain boundaries in high-Tcsuperconductors

2002

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“…Some experiments with such a class of Josephson junctions were conducted in Refs. 4, 5 and 6 with a MFIJJ 11. The modulation of the superconducting order parameter (SCOP) is due to the existence of the magnetic, electric, or combined electric and magnetic field coming from the non‐superconducting element.…”

Section: Definition Of Field‐induced Josephson Junctionmentioning

confidence: 99%

“…The boundary condition between the s ‐wave superconductor and normal metal is given as where n is the unit vector perpendicular to the superconductor–other medium (as normal metal) interface, b is the constant depending on the material as $b = (N_{s} D_{s} /N_{n} D_{n} )\xi $ , where N s and N n are the densities of states at the Fermi level in a superconductor and in a normal metal at the Fermi level, ξ is the superconducting coherence length, and D s and D f are diffusion constants correlated to the Fermi velocity and relaxation time. The constant b can be expressed by means of the Usadel formalism 9, 11.…”

Section: Mathematical Description Of Fijjmentioning

confidence: 99%

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Possible existence of field‐induced Josephson junctions

Pomorski

Prokopow

2012

Physica Status Solidi (b)

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We demonstrate the possible existence of a new class of superconducting Josephson junctions (JJs) named field-induced Josephson junctions (FIJJs). One representative is a junction made by placing a ferromagnetic strip on the top of a superconducting strip, which we study in this work. We obtain a possible transition between one regime of an FIJJ, which is the quasi-tunneling weak link Josephson junction (similar in certain aspects to an S-F-S Josephson junction, but with different boundary conditions), and the second regime of an FIJJ, which is the weak link constriction (two superconductors connected by a narrow superconducting link) as a function of the thickness of the superconducting strip, magnitude of magnetization, and temperature. We use the generalized Ginzburg-Landau (GL) equations derived from the extended Hubbard model in order to determine some properties of the new class of Josephson junction. In this paper, we perform the computation for a first type of superconductor, although both types of superconductor can be used to create an FIJJ. Further directions of studies of the indicated class of Josephson junction are also described.

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“…Small area of electrode can minimize the defects of PZT gate and get as high as possible polarization and breakdown field, but for the YBCO channel, the possibility of existence of defects, such as grain boundary where strong field effect can be obtained due to lower carrier density as reported in Ref. 16, should be also minimized in the small gate area especially for the high quality YBCO layer. This may be the reason that we could not get a strong field effect for YBCO channel even under the high polarization and breakdown field of PZT gate.…”

mentioning

confidence: 99%

Investigation on Ag/Pb(Zr0.53Ti0.47)O3/YBa2Cu3O7−δ three-terminal system with small gate area

Liu

Hao

Chen

et al. 1999

Applied Physics Letters

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The three-terminal devices Ag/Pb(ZrxTi1−x)O3/YBa2Cu3O7−δ(Ag/PZT/YBCO) have been fabricated onto (100) SrTiO3 by pulsed laser deposition technique and photolithography. For the purpose of application, we specially selected the PZT layer with morphotropic phase boundary composition as the gate to lower the coercive fields and decrease the operating voltage. We tried to minimize the electrode area to 6×10−6 cm2 for deeply investigating the leakage problem and getting sufficient polarization of the PZT gate, also for the high integration in future application. From the process, we obtained the following results at 64 K: the saturation polarization and the remanent polarization reach 60 and 41 μC/cm2, respectively. The coercive field is lower than 37 kV/cm, and the breakdown field is ⩾3×105 V/cm. The electric field effect measurement shows that the maximum modulation channel resistance ΔRDS/RDS is 3% under the gate voltage of ±9 V at 64 K (lower than the zero resistance temperature TC0, 70 K), at which the superconducting and normal state transition is driven by channel current IDS(IDS>Ic, Ic=15 mA).

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Ginzburg–Landau theory of Josephson field effect transistors

Cited by 5 publications

References 14 publications

Grain boundaries in high-Tcsuperconductors

Grain boundaries in high-Tcsuperconductors

Possible existence of field‐induced Josephson junctions

Investigation on Ag/Pb(Zr0.53Ti0.47)O3/YBa2Cu3O7−δ three-terminal system with small gate area

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