Gigabit electronics—A review

Materials research plays a vital role in transforming breakthrough scientific ideas into next-generation technology. Similar to the way silicon revolutionized the microelectronics industry, the proper materials can greatly impact the field of plasmonics and metamaterials. Currently, research in plasmonics and metamaterials lacks good material building blocks in order to realize useful devices. Such devices suffer from many drawbacks arising from the undesirable properties of their material building blocks, especially metals. There are many materials, other than conventional metallic components such as gold and silver, that exhibit metallic properties and provide advantages in device performance, design flexibility, fabrication, integration, and tunability. This review explores different material classes for plasmonic and metamaterial applications, such as conventional semiconductors, transparent conducting oxides, perovskite oxides, metal nitrides, silicides, germanides, and 2D materials such as graphene. This review provides a summary of the recent developments in the search for better plasmonic materials and an outlook of further research directions.

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Alternative Plasmonic Materials: Beyond Gold and Silver

Naik¹,

Shalaev²,

Boltasseva³

2013

Advanced Materials

1,936

1,656

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On code conversion by constant‐resistance distributed coupled‐line networks

Iwata

Hatori

1982

Electron. Comm. Jpn. Pt. I

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When a unit impulse is incident on a constant‐resistance distributed coupled‐line network consisting of equally long multisection two‐wire coupled lines and a π‐type resistive network, the output response is an infinite pulse train with diminishing amplitudes. With an appropriate choice of element values it is shown that the amplitude ratio of a first few pulses is (1, Om, 1), (1, Om, ‐1), (2, Om, 1, Om, ‐1) and (1, Om, 2, Om, 1) and the remaining pulses become negligibly small. These first few pulses are considered to be signal components with the remaining pulses constituting the characteristic wave distortion. It is possible to reduce this distortion by increasing the number of coupled line sections. In this paper, the distortion rate is defined as the ratio of the characteristic wave distortion power to the signal power. With the total reflected power of the circuit expressed in terms of a complex integral, calculation of the distortion rate is possible. We quantitatively characterize the operational circuit as a symbol converter. Calculations have been made for coupled lines with up to 4 sections. Since the formulation becomes complicated as the number of sections increases, the numerical calculations are made on a computer.

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Multielement distributed coupled‐line constant‐resistance circuit with frequency multiplication characteristics

Iwata

Suzuki

Miki

et al. 1981

Electron. Comm. Jpn. Pt. I

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The microwave‐band distributed‐parameter constant‐resistance π‐type circuit composed of multistage two‐wire coupled lines and three resistances can be used as frequency multipliers which generate clock pulses 1010,…, 1–1, 1–1,…. The realization condition is discussed in this paper. The n‐section coupled line is represented by the equivalent signal flow graph where the delay line is considered delay element z−1. The transfer function in the z‐region is expressed by reflection coefficients at each section alone. The frequency‐multiplying circuit presented in this paper is composed of passive elements alone and is free from the external temperature variation. The experimental example is presented to confirm the validity of the theory.

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Gigabit electronics—A review

Cited by 32 publications

References 194 publications

Alternative Plasmonic Materials: Beyond Gold and Silver

Alternative Plasmonic Materials: Beyond Gold and Silver

On code conversion by constant‐resistance distributed coupled‐line networks

Multielement distributed coupled‐line constant‐resistance circuit with frequency multiplication characteristics

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