Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

Дубровский, В. Г.; Sibirev, N. V.; Cirlin, G. É.; Сошніков, І. П.; Chen, Wanghua; Lardé, R.; Cadel, E.; Pareige, P.; Xu, Tao; Grandidier, B.; Nys, J.P.; Stiévenard, D.; Moewe, M.; Chuang, Linus C.; Chang-Hasnain, Connie J.

doi:10.1103/physrevb.79.205316

Cited by 171 publications

(223 citation statements)

References 28 publications

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“…This model agrees well with experimental observations for the growth rate of GaAs NWs (see Fig. 10) [72], where only the contribution of surface diffusion is taken into account but the other material transport pathways such as direct impingement and desorption are neglected. The value of r GT = 3.5 nm, used in calculations, corresponds to a 30% alloy of liquid Ga with Au.…”

Section: Reviewsupporting

confidence: 89%

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Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

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introduced by Wagner and Ellis in the 1960's to grow Si submicrosize whiskers [2]. Although Si nanowires are useful, particular their easy incorporation with mature Si technology, which makes products cheap and suitable for mass production, the indirect band gap of Si is hindering the application of this material in many fields where direct band gap is essential, such as optoelectronics. In this regard, III-V compound semiconductors are dominating due to their direct band gap and flexibility in band gap and lattice engineering. In the early 1990s, Scientists from Hitachi employed the VLS approach to grow III-V nanowires [3,4]. At that time, good position and orientation control was achieved as well as the demonstration of the first p-n junctions based on heterostructured nanowires [5]. These novel one-dimensional (1D) III-V nanostructures provide a good model system for investigating the dependence of electronic transport, optical, and mechanical properties on their confinement effects. They demonstrated the potential of these nanowires in the next-generation integrated circuits and functional devices, such as field-effect transistors [6−8], single-electron transistors [9], light-emitting devices [10], chemical sensors [11−14], and THz detectors [15].The control of NW growth is considered to be one of the key points and the foundation of successful NW-based device fabrication. The benefit of NWs is that due to their small radial dimension and the large aspect ratio, the strain in axial heterostructures induced by the lattice mismatch can be relaxed within a small region close to the interface. Therefore, there is virtually no limitation in the choice of materials by the requirement of lattice-matching.Another benefit of III-V semiconductor NWs is that by carefully choosing substrates, the growth of NWs can be self-assembled, and as-grown epitaxial NWs are free-standing. Additionally, by employing nanoscale lithography techniques, e.g., electron beam lithography, it is possible to realize the growth of NWs on pre-patterned substrates [16−20].ABSTRACT In this paper, we present a review about recent progress on the growth of III-V semiconductor homo-and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/ V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

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Section: Reviewsupporting

confidence: 89%

“…Dubrovskii et al [71,72] were the first to demonstrate the possibility to combine both the kinetic and the thermodynamic mechanisms within a general growth model. Within this model, the growth rate of the NW is given by:…”

Section: Reviewmentioning

confidence: 99%

Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

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“…The growth rate of the GaP wires is higher for smaller diameters, which is consistent with a constant collection area per wire 22,23 . In contrast to GaP, the Si growth rate increases with the catalyst diameter [24][25][26] . Two independent factors explain this behaviour: synergetic nanowire growth 27 and the Gibbs-Thomson effect 28,29 .…”

Section: Resultsmentioning

confidence: 99%

“…A more important contribution comes from the GibbsThomson effect known for increasing the silicon partial pressure in the catalyst upon decreasing the diameter. As a consequence, the incorporation of atoms from the gas phase into the catalyst is reduced 24,25 . We note that the silicon supersaturation inside the catalyst does not only depend on the catalyst radius, but also on the liquid-vapour surface energy.…”

Section: Resultsmentioning

confidence: 99%

Growth and optical properties of axial hybrid III–V/silicon nanowires

et al. 2012

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Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the fundamental single-electron and singlephoton regime. III-V materials, such as direct bandgap gallium arsenide, are excellent candidates for such optical segments. However, interfacing them with silicon during crystal growth is a major challenge, because of the lattice mismatch, different expansion coefficients and the formation of antiphase boundaries. Here we demonstrate a silicon nanowire with an integrated gallium-arsenide segment. We precisely control the catalyst composition and surface chemistry to obtain dislocation-free interfaces. The integration of gallium arsenide of high optical quality with silicon is enabled by short gallium phosphide buffers. We anticipate that such hybrid silicon/III-V nanowires open practical routes for quantum information devices, where for instance electronic and photonic quantum bits are manipulated in a III-V segment and stored in a silicon section.

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“…As shown by Bauer et al [80] and Plissard et al [81] it is possible grow positioned self-catalysed GaAs NW arrays using a Si/SiO x template, and when growing the wires using a hole array in a SiO x layer thermally grown on the Si substrate, approximately the same growth temperatures as above is used, but the Ga flux needs to be equivalent to a planar growth rate of 0.8-1.2 µm h −1 and the V/III flux ratios need to be in the range 1-5 (see [83,17] for details). This is a much higher Ga flux than for growth on untreated substrates with native oxide and is an indication that the av transition rate from the thick thermally grown oxide layer is dominant for the adatom state, as also seen in.…”

Section: Growth Of Self-catalysed Gaas Nws On Patterned Si(1 1 1)/siomentioning

confidence: 99%

Advances in the theory of III–V nanowire growth dynamics

Krogstrup¹,

Jørgensen²,

Johnson³

et al. 2013

J. Phys. D: Appl. Phys.

132

142

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Nanowire (NW) crystal growth via the vapour-liquid-solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III-V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.

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Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

Cited by 171 publications

References 28 publications

Growth of III-V semiconductor nanowires and their heterostructures

Growth of III-V semiconductor nanowires and their heterostructures

Growth and optical properties of axial hybrid III–V/silicon nanowires

Advances in the theory of III–V nanowire growth dynamics

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